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934056420127 PDF预览

934056420127

更新时间: 2024-11-21 20:10:31
品牌 Logo 应用领域
恩智浦 - NXP 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 91K
描述
TRANSISTOR 55.5 A, 150 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power

934056420127 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.19雪崩能效等级(Eas):300 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:150 V最大漏极电流 (ID):55.5 A
最大漏源导通电阻:0.03 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):222 A认证状态:Not Qualified
表面贴装:NO端子面层:PURE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

934056420127 数据手册

 浏览型号934056420127的Datasheet PDF文件第2页浏览型号934056420127的Datasheet PDF文件第3页浏览型号934056420127的Datasheet PDF文件第4页浏览型号934056420127的Datasheet PDF文件第5页浏览型号934056420127的Datasheet PDF文件第6页浏览型号934056420127的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
N-channel TrenchMOS transistor  
PSMN030-150P  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
d
’Trench’ technology  
• Very low on-state resistance  
• Fast switching  
VDSS = 150 V  
ID = 55.5 A  
• Low thermal resistance  
g
RDS(ON) 30 mΩ  
s
GENERAL DESCRIPTION  
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in  
each package at each voltage rating.  
Applications:-  
• d.c. to d.c. converters  
• switched mode power supplies  
The PSMN030-150P is supplied in the SOT78 (TO220AB) conventional leaded package.  
PINNING  
SOT78 (TO220AB)  
PIN  
DESCRIPTION  
tab  
1
2
gate  
drain  
source  
drain  
3
tab  
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDSS  
VDGR  
VGS  
ID  
Drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Continuous drain current  
Tj = 25 ˚C to 175˚C  
Tj = 25 ˚C to 175˚C; RGS = 20 k  
-
-
-
-
-
-
-
150  
150  
± 20  
55.5  
39  
222  
250  
175  
V
V
V
A
A
A
W
˚C  
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
IDM  
PD  
Tj, Tstg  
Pulsed drain current  
Total power dissipation  
Operating junction and  
storage temperature  
- 55  
June 2000  
1
Rev 1.000  

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