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934056194115 PDF预览

934056194115

更新时间: 2024-01-27 20:29:04
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲光电二极管晶体管
页数 文件大小 规格书
13页 284K
描述
5.5A, 55V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-73, 4 PIN

934056194115 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:compliant
风险等级:5.28雪崩能效等级(Eas):25 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (ID):5.5 A
最大漏源导通电阻:0.15 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):22 A
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

934056194115 数据手册

 浏览型号934056194115的Datasheet PDF文件第6页浏览型号934056194115的Datasheet PDF文件第7页浏览型号934056194115的Datasheet PDF文件第8页浏览型号934056194115的Datasheet PDF文件第10页浏览型号934056194115的Datasheet PDF文件第11页浏览型号934056194115的Datasheet PDF文件第12页 
BUK78150-55A  
TrenchMOS™ standard level FET  
Philips Semiconductors  
9. Package outline  
Plastic surface mounted package; collector pad for good heat transfer; 4 leads  
SOT223  
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X  
1
e
0
2
4 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
UNIT  
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8  
1.5  
0.10 0.80  
0.01 0.60  
3.1  
2.9  
0.32  
0.22  
6.7  
6.3  
3.7  
3.3  
7.3  
6.7  
1.1  
0.7  
0.95  
0.85  
mm  
4.6  
2.3  
0.2  
0.1  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
SC-73  
97-02-28  
99-09-13  
SOT223  
Fig 16. SOT223 (SC-73).  
9397 750 07738  
© Philips Electronics N.V. 2001. All rights reserved.  
Product specification  
Rev. 01 — 30 January 2001  
9 of 13  

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