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934056194115 PDF预览

934056194115

更新时间: 2024-02-05 22:39:27
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲光电二极管晶体管
页数 文件大小 规格书
13页 284K
描述
5.5A, 55V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-73, 4 PIN

934056194115 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:compliant
风险等级:5.28雪崩能效等级(Eas):25 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (ID):5.5 A
最大漏源导通电阻:0.15 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):22 A
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

934056194115 数据手册

 浏览型号934056194115的Datasheet PDF文件第5页浏览型号934056194115的Datasheet PDF文件第6页浏览型号934056194115的Datasheet PDF文件第7页浏览型号934056194115的Datasheet PDF文件第9页浏览型号934056194115的Datasheet PDF文件第10页浏览型号934056194115的Datasheet PDF文件第11页 
BUK78150-55A  
TrenchMOS™ standard level FET  
Philips Semiconductors  
03nc22  
03nb87  
10  
10  
V
I
GS  
D
(A)  
(V)  
9
8
7
6
5
4
3
2
1
0
V
= 14 V  
DD  
8
V
= 44 V  
DD  
6
4
2
T = 25 O  
C
T = 150 O  
j
C
j
0
0
2
4
6
8
10  
(V)  
0
2
4
6
V
Q
(nC)  
G
GS  
VDS = 25 V  
Tj = 25 °C; ID = 5 A  
Fig 13. Transfer characteristics: drain current as a  
function of gate-source voltage; typical values.  
Fig 14. Gate-source voltage as a function of turn-on  
gate charge; typical values.  
03nc23  
60  
I
S
(A)  
50  
40  
30  
T = 150 O  
j
C
T = 25 O  
C
j
20  
10  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
(V)  
V
SD  
VGS = 0 V  
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.  
9397 750 07738  
© Philips Electronics N.V. 2001. All rights reserved.  
Product specification  
Rev. 01 — 30 January 2001  
8 of 13  

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