Datasheet > 934056283118

934056283118

更新时间： 2023-01-02 14:11:03

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	306K
描述
Power Field-Effect Transistor, 75A I(D), 75V, 0.0099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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934056283118 数据手册

BUK9509-75A; BUK9609-75A

TrenchMOS™ logic level FET

Rev. 02 — 06 November 2000

Product speciﬁcation

1. Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

TrenchMOS™ technology, featuring very low on-state resistance.

Product availability:

BUK9509-75A in SOT78 (TO-220AB)

BUK9609-75A in SOT404 (D ²-PAK).

2. Features

■ TrenchMOS™ technology

■ Q101 compliant

■ 175 °C rated

■ Logic level compatible.

3. Applications

■ Automotive and general purpose power switching:

◆ 12 V, 24 V and 42 V loads

◆ Motors, lamps and solenoids.

4. Pinning information

Table 1: Pinning - SOT78 and SOT404, simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

drain (d)

source (s)

mounting base;

connected to drain (d)

MBB076

MBK116

MBK106

2 3

SOT404 (D²-PAK)

SOT78 (TO-220AB)

12 3 4 5 6 7...15

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