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934008680115

更新时间： 2024-11-11 20:06:55
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管
页数 文件大小 规格书
5页 39K
描述
DIODE 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, SC-73, 4 PIN, Signal Diode

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934008680115 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：SC-73包装说明：R-PDSO-G4
针数：4Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.74
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：R-PDSO-G4元件数量：2
端子数量：4封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
表面贴装：YES技术：SCHOTTKY
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

934008680115 数据手册

 浏览型号934008680115的Datasheet PDF文件第2页浏览型号934008680115的Datasheet PDF文件第3页浏览型号934008680115的Datasheet PDF文件第4页浏览型号934008680115的Datasheet PDF文件第5页 
Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYR245CT series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Reverse surge capability  
• High thermal cycling performance  
• low profile surface mounting  
package  
VR = 40 V/ 45 V  
IO(AV) = 2 A  
a1  
1
a2  
3
k
2
VF ≤ 0.45V  
GENERAL DESCRIPTION  
PINNING  
SOT223  
Dual, common cathode schottky  
PIN  
DESCRIPTION  
anode 1  
cathode  
4
rectifier diodes in  
a
plastic  
envelope. Intended for use as  
output rectifiers in low voltage, high  
frequency switched mode power  
supplies.  
1
2
3
anode 2  
cathode  
The PBYR245CT series is supplied  
in the surface mounting SOT223  
package.  
tab  
2
3
1
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
PBYR2  
40CT  
45CT  
VRRM  
VRWM  
Peak repetitive reverse  
-
-
40  
45  
45  
45  
V
V
voltage  
Working peak reverse  
voltage  
Continuous reverse voltage  
40  
40  
VR  
T
sp ≤ 74 ˚C  
-
-
V
A
IO(AV)  
Average rectified output  
current (both diodes  
conducting)  
square wave; δ = 0.5; Tsp ≤ 119 ˚C  
2
2
IFRM  
IFSM  
Repetitive peak forward  
current per diode  
square wave; δ = 0.5; Tsp ≤ 119 ˚C  
-
A
Non-repetitive peak forward t = 10 ms  
-
-
6
6.6  
A
A
current per diode  
t = 8.3 ms  
sinusoidal; Tj = 125 ˚C prior to  
surge; with reapplied VRRM(max)  
pulse width and repetition rate  
limited by Tj max  
IRRM  
Tj  
Peak repetitive reverse  
surge current per diode  
Operating junction  
temperature  
-
-
1
A
150  
150  
˚C  
˚C  
Tstg  
Storage temperature  
- 40  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-a  
Thermal resistance junction pcb mounted, minimum footprint  
to ambient pcb mounted, pad area as in fig:1  
-
-
156  
70  
-
-
K/W  
K/W  
July 1998  
1
Rev 1.400  
12345

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