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934002640215 PDF预览

934002640215

更新时间: 2024-11-11 19:54:11
品牌 Logo 应用领域
恩智浦 - NXP 放大器光电二极管晶体管
页数 文件大小 规格书
15页 140K
描述
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC PACKAGE-4

934002640215 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.06其他特性:LOW NOISE
外壳连接:SOURCE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:12 V最大漏极电流 (ID):0.03 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
元件数量:2端子数量:4
工作模式:DUAL GATE, DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

934002640215 数据手册

 浏览型号934002640215的Datasheet PDF文件第2页浏览型号934002640215的Datasheet PDF文件第3页浏览型号934002640215的Datasheet PDF文件第4页浏览型号934002640215的Datasheet PDF文件第5页浏览型号934002640215的Datasheet PDF文件第6页浏览型号934002640215的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
BF998; BF998R  
Silicon N-channel dual-gate  
MOS-FETs  
Product specification  
1996 Aug 01  
Supersedes data of April 1991  
File under Discrete Semiconductors, SC07  

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