生命周期: | Active | Reach Compliance Code: | unknown |
风险等级: | 5.73 | 最大测量范围(毫米): | 4.99 mm |
最小测量范围(毫米): | 4 mm | 最高工作温度: | 85 °C |
最低工作温度: | -25 °C | 输出接口类型: | 3-WIRE INTERFACE |
封装形状/形式: | CYLINDRICAL | 传感器/换能器类型: | PROXIMITY SENSOR,INDUCTIVE |
最大供电电压: | 27.6 V | 最小供电电压: | 20.4 V |
端接类型: | CONNECTOR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
933PC | ETC |
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Gate Expander | |
934000120116 | NXP |
获取价格 |
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43, 3 PIN, B | |
934000540115 | NXP |
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TRANSISTOR 375 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, | |
934000550115 | NXP |
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TRANSISTOR 350 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S | |
934001190113 | NXP |
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1A, 20V, SILICON, SIGNAL DIODE | |
934001200113 | NXP |
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DIODE 1 A, 30 V, SILICON, SIGNAL DIODE, Signal Diode | |
934001230115 | NXP |
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DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor | |
934001230135 | NXP |
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DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor | |
934001240115 | NXP |
获取价格 |
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor | |
934001240135 | NXP |
获取价格 |
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor |