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933946360235 PDF预览

933946360235

更新时间: 2024-11-12 21:09:39
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
12页 89K
描述
TRANSISTOR 130 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal

933946360235 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.56其他特性:LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:50 V
最大漏极电流 (ID):0.13 A最大漏源导通电阻:10 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):12 pF
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

933946360235 数据手册

 浏览型号933946360235的Datasheet PDF文件第2页浏览型号933946360235的Datasheet PDF文件第3页浏览型号933946360235的Datasheet PDF文件第4页浏览型号933946360235的Datasheet PDF文件第5页浏览型号933946360235的Datasheet PDF文件第6页浏览型号933946360235的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
BSS84  
P-channel enhancement mode  
vertical D-MOS transistor  
1997 Jun 18  
Product specification  
Supersedes data of 1995 Apr 07  
File under Discrete Semiconductors, SC13b  

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