是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOIC | 包装说明: | SOP, |
针数: | 16 | Reach Compliance Code: | unknown |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.71 |
其他特性: | IOL = 160MA @ VOL = 0.5V; IOH = 67MA @ VOH = 2V; DUAL CENTER PIN VCC AND GND | 系列: | F/FAST |
JESD-30 代码: | R-PDSO-G16 | JESD-609代码: | e4 |
长度: | 10.3 mm | 逻辑集成电路类型: | NAND GATE |
功能数量: | 4 | 输入次数: | 2 |
端子数量: | 16 | 最高工作温度: | 70 °C |
最低工作温度: | 封装主体材料: | PLASTIC/EPOXY | |
封装代码: | SOP | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
传播延迟(tpd): | 5.5 ns | 认证状态: | Not Qualified |
座面最大高度: | 2.65 mm | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | TTL |
温度等级: | COMMERCIAL | 端子面层: | NICKEL PALLADIUM GOLD |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 7.5 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
933958690623 | NXP |
获取价格 |
IC F/FAST SERIES, QUAD 2-INPUT NAND GATE, PDSO16, 3.90 MM, PLASTIC, SOT-108-1, SO-14, Gate | |
933959440113 | NXP |
获取价格 |
DIODE 0.02 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diod | |
933959440153 | NXP |
获取价格 |
DIODE 0.02 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diod | |
933959450113 | NXP |
获取价格 |
DIODE 0.02 A, 6000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diod | |
933959450153 | NXP |
获取价格 |
DIODE 0.02 A, 6000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diod | |
933959460153 | NXP |
获取价格 |
DIODE 0.004 A, 10000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Di | |
933959470113 | NXP |
获取价格 |
DIODE 0.004 A, 12000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Di | |
933959480113 | NXP |
获取价格 |
DIODE 0.004 A, 14000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Di | |
933959490153 | NXP |
获取价格 |
DIODE 0.003 A, 17000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Di | |
933959500113 | NXP |
获取价格 |
DIODE 0.003 A, 19000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Di |