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8TQ060PBF PDF预览

8TQ060PBF

更新时间: 2024-12-01 06:33:39
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
6页 115K
描述
Schottky Rectifier, 8 A

8TQ060PBF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-220AC
包装说明:R-PSFM-T2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.75
Is Samacsys:N其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT
应用:HIGH POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.58 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:850 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:60 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

8TQ060PBF 数据手册

 浏览型号8TQ060PBF的Datasheet PDF文件第2页浏览型号8TQ060PBF的Datasheet PDF文件第3页浏览型号8TQ060PBF的Datasheet PDF文件第4页浏览型号8TQ060PBF的Datasheet PDF文件第5页浏览型号8TQ060PBF的Datasheet PDF文件第6页 
8TQ...PbF Series  
Vishay High Power Products  
Schottky Rectifier, 8 A  
FEATURES  
• 175 °C TJ operation  
Pb-free  
Base  
cathode  
2
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
Available  
RoHS*  
COMPLIANT  
encapsulation for enhanced mechanical strength and  
moisture resistance  
1
3
• Guard ring for enhanced ruggedness and long term  
reliability  
TO-220AC  
Cathode Anode  
• Lead (Pb)-free (“PbF” suffix)  
• Designed and qualified for industrial level  
DESCRIPTION  
The 8TQ...PbF Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
PRODUCT SUMMARY  
IF(AV)  
8 A  
VR  
60 to 100 V  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
8
UNITS  
Rectangular waveform  
A
V
Range  
60 to 100  
850  
tp = 5 µs sine  
8 Apk, TJ = 125 °C  
Range  
A
VF  
0.58  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
8TQ060PbF  
8TQ080PbF  
8TQ100PbF  
100  
UNITS  
Maximum DC reverse voltage  
VR  
60  
80  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 157 °C, rectangular waveform  
8
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated load  
condition and with rated  
5 µs sine or 3 µs rect. pulse  
850  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
230  
V
RRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
7.50  
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.50  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94265  
Revision: 06-Jun-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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