VS-8TQ080GSPbF, VS-8TQ100GSPbF
Vishay High Power Products
Schottky Rectifier, 8 A
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
Base
cathode
2
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
3
1
D2PAK
N/C
Anode
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
PRODUCT SUMMARY
DESCRIPTION
IF(AV)
8 A
80 V/100 V
The VS-8TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
VR
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
Rectangular waveform
Range
VALUES
8
UNITS
A
V
80/100
850
tp = 5 μs sine
A
VF
8 Apk, TJ = 125 °C
Range
0.58
V
TJ
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-8TQ080GSPbF
VS-8TQ100GSPbF
UNITS
Maximum DC reverse voltage
VR
80
100
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
See fig. 5
IF(AV)
50 % duty cycle at TC = 157 °C, rectangular waveform
8
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Following any rated
load condition and with
rated VRRM applied
5 μs sine or 3 μs rect. pulse
850
IFSM
A
10 ms sine or 6 ms rect. pulse
230
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 0.5 A, L = 60 mH
7.50
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.5
Document Number: 94264
Revision: 23-Mar-10
For technical questions, contact: diodestech@vishay.com
www.vishay.com
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