Datasheet > 8TQ080-N3

8TQ080-N3

更新时间： 2024-09-26 08:06:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	177K
描述
Schottky Rectifier, 8 A

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8TQ080-N3 数据手册

VS-8TQ...PbF Series, VS-8TQ...-N3 Series

www.vishay.com

Vishay Semiconductors

Schottky Rectifier, 8 A

FEATURES

Base

• 175 °C T_Joperation

cathode

• Low forward voltage drop

• High frequency operation

• High

purity,

high

temperature

epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

TO-220AC

Cathode Anode

• Guard ring for enhanced ruggedness and long

term reliability

• Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

• Designed and qualified according to JEDEC-JESD47

Package

TO-220AC

8 A

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

I_F(AV)

V_R

60 V, 80 V, 100 V

0.58 V

DESCRIPTION

V_Fat I_F

The VS-8TQ... Schottky rectifier series has been optimized

for low reverse leakage at high temperature. The proprietary

barrier technology allows for reliable operation up to 175 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

_RMmax.

7 mA at 125 °C

175 °C

T_Jmax.

Diode variation

E_AS

Single die

7.5 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

Range

60 to 100

850

t_p= 5 μs sine

8 A_pk, T_J= 125 °C

Range

V_F

0.58

T_J

- 55 to 175

°C

VOLTAGE RATINGS

VS-

8TQ060PbF

VS-

8TQ060-N3

VS-

8TQ080PbF

VS-

8TQ080-N3

VS-

8TQ100PbF

VS-

8TQ100-N3

PARAMETER

SYMBOL

UNITS

Maximum DC

reverse voltage

V_R

100

Maximum working

peak reverse

voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

50 % duty cycle at T_C= 157 °C, rectangular waveform

VALUES UNITS

Maximum average forward current

See fig. 5

I_F(AV)

Maximum peak one cycle

non-repetitive surge current

See fig. 7

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse

850

Following any rated load

condition and with rated

I_FSM

V_RRMapplied

230

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 0.50 A, L = 60 mH

7.50

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

0.50

Revision: 29-Aug-11

Document Number: 94265

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与8TQ080-N3相关器件

型号	品牌	获取价格	描述	数据表
8TQ080PBF	VISHAY	获取价格	Schottky Rectifier, 8 A
8TQ080PBF	INFINEON	获取价格	SCHOTTKY RECTIFIER
8TQ080S	VISHAY	获取价格	Schottky Rectifier, 8 A
8TQ080S	INFINEON	获取价格	SCHOTTKY RECTIFIER
8TQ080S-GT4	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, Silicon, PLASTIC, D2PAK-3
8TQ080SPBF	INFINEON	获取价格	SCHOTTKY RECTIFIER 8 Amp
8TQ080SPBF	VISHAY	获取价格	Schottky Rectifier, 8 A
8TQ080SPBF_10	VISHAY	获取价格	Schottky Rectifier, 8 A
8TQ080S-T4	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, Silicon, PLASTIC, D2PAK-3
8TQ080STRL	VISHAY	获取价格	Schottky Rectifier, 8 A

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