Datasheet > 80-M112PMA015M702-K200A72

80-M112PMA015M702-K200A72

更新时间： 2024-10-29 15:19:47

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
32页	8709K
描述
IGBT M7 Easy paralleling Low turn-off losses Low collector emitter saturation voltage Positive temperature coefficient Short tail current Switching optimized for EMC

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80-M112PMA015M702-K200A72

datasheet

Brake Switching Characteristics

figure 49.

FWD

figure 50.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor

di_F/dt, di_rr/dt = f(I_C)

di_F/dt, di_rr/dt = f(R_gon)

300

500

400

300

200

100

di_F/dt ‒ ‒ ‒ ‒ ‒

di_rr/dt ──────

250

200

150

100

I_C(A)

100

125

150

_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

V_CE

V_GE

I_C

700

0/15

125 °C

150 °C

700

0/15

125 °C

150 °C

T_j:

figure 51.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

I_{C MAX}

250

500

750

1000

1250

1500

_CE(V)

T_j=

150

°C

R_gon

R_goff

09 Jun. 2023 / Revision 1

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