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80-M112PMA015M702-K200A72 PDF预览

80-M112PMA015M702-K200A72

更新时间: 2024-10-29 15:19:47
品牌 Logo 应用领域
VINCOTECH 双极性晶体管
页数 文件大小 规格书
32页 8709K
描述
IGBT M7 Easy paralleling Low turn-off losses Low collector emitter saturation voltage Positive temperature coefficient Short tail current Switching optimized for EMC

80-M112PMA015M702-K200A72 数据手册

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80-M112PMA015M702-K200A72  
datasheet  
Brake Switching Characteristics  
figure 45.  
FWD  
figure 46.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
5
10  
15  
20  
25  
30  
0
25  
50  
75  
100  
125  
150  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
700  
0/15  
32  
V
V
Ω
125 °C  
150 °C  
700  
0/15  
15  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 47.  
FWD  
figure 48.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
12,5  
10,0  
7,5  
17,5  
15,0  
12,5  
10,0  
7,5  
IRM  
IRM  
IRM  
5,0  
IRM  
IRM  
IRM  
5,0  
2,5  
2,5  
0,0  
0,0  
0
5
10  
15  
20  
25  
30  
0
25  
50  
75  
100  
125  
150  
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
700  
0/15  
32  
V
V
Ω
125 °C  
150 °C  
700  
0/15  
15  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
26  
09 Jun. 2023 / Revision 1  

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