Datasheet > 80-M112PMA015M702-K200A72

80-M112PMA015M702-K200A72

更新时间： 2024-03-03 10:11:35

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
32页	8709K
描述
IGBT M7 Easy paralleling Low turn-off losses Low collector emitter saturation voltage Positive temperature coefficient Short tail current Switching optimized for EMC

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80-M112PMA015M702-K200A72

datasheet

Brake Switching Characteristics

figure 45.

FWD

figure 46.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of IGBT turn on gate resistor

Q_r= f(I_C)

Q_r= f(R_gon)

3,5

3,0

2,5

2,0

1,5

1,0

0,5

0,0

3,0

2,5

2,0

1,5

1,0

0,5

0,0

Q_r

100

125

150

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

V_CE

V_GE

I_C

700

0/15

125 °C

150 °C

700

0/15

125 °C

150 °C

T_j:

figure 47.

FWD

figure 48.

FWD

Typical peak reverse recovery current as a function of collector current

Typical peak reverse recovery current as a function of IGBT turn on gate resistor

I_RM= f(I_C)

I_RM= f(R_gon)

12,5

10,0

7,5

17,5

15,0

12,5

10,0

7,5

I_RM

5,0

I_RM

5,0

2,5

0,0

100

125

150

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

V_CE

V_GE

I_C

700

0/15

125 °C

150 °C

700

0/15

125 °C

150 °C

T_j:

09 Jun. 2023 / Revision 1

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