Datasheet > 7MBR30UE060

7MBR30UE060

更新时间： 2024-01-05 03:08:23

品牌	Logo	应用领域
富士电机 - FUJI		栅
页数	文件大小	规格书
5页	87K
描述
Insulated Gate Bipolar Transistor,

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7MBR30UE060 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.73
Base Number Matches：	1

7MBR30UE060 数据手册

reduction in total IGBT loss, compared with the S-

series. For U-series IGBT modules, in which on-state

energy loss has been decreased due to a reduction of

V_{CE (sat)}, an additional 10 % reduction of loss has been

realized.

achieved. These improvements led to the realization of

an FWD having low generated loss and low noise, and

enabled its application to the U-series module.

5. Introduction of Product Series

4. Improvement of FWD

Details of the U-series IGBT product lineup are as

follows.

The U-series IGBT product lineup and

An FWD is packed into an IGBT module together

with an IGBT, and the FWD is required to have soft

recovery characteristics and reduced levels of generat-

ed loss. The improvements include optimization of

wafer specifications, injection control from the anode at

the chip’s front structure and implementation of

optimal lifetime control. Fuji Electric has developed

FWDs with a revised new design. The output charac-

teristics are shown in Fig. 9. As a result, the forward

voltage (V_F) has been reduced and positive tempera-

ture dependance have been realized. Because carrier

injection is suppressed, the peak current at reverse

recovery has been reduced, loss generation has been

reduced, and soft-recovery characteristics have been

product release date are shown in Table 1, and the

external view of a typical package is shown in Fig. 10.

The major ratings and characteristics of U-series

IGBTs are shown in Table 2.

6. Conclusion

The T-series and U-series of IGBTs for 600 V-NPT

modules were introduced. Fuji Electric will continue to

advance the high performance of these modules by

developing specific technology for IGBTs and by incor-

porating technologies of other types of semiconductors,

and will strive to contribute to the overall development

of power electronics.

114

Vol. 48 No. 4 FUJI ELECTRIC REVIEW

1 2 3 45

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