requires keeping the depletion layer end thick enough
so there is no punch-through even when the maximum
CE voltage is applied. The optimal thickness is
thinner for devices having lower CE forward blocking
voltage, making their manufacturing even more diffi-
cult.
device is about 800 V, similar to that of the PT device,
and higher than the maximum rated voltage of 600 V.
Figure 4 shows a comparison of turn-off waveforms.
In PT-type devices, which are injected more from the
collector side, lifetime control is implemented to pro-
mote the recombination of carriers at the time of turn-
off. However, because this effect decreases as the
temperature increases, the loss tends to increase
caused by the increase of tail current. For NPT-type
devices, on the other hand, no lifetime control is
applied and therefore these temperature dependence
do not exist, resulting in no change in the turn-off
waveform and no increase in turn-off loss.
2.2 Fuji Electric approach to NPT devices
Fuji Electric has been involved in developing NPT
technology earlier on as shown in Fig. 2, and is
working to extend the application of this technology to
more challenging devices having lower forward block-
ing voltages.
Although the optimal thickness for 600 V-NPT
IGBTs application is said to be about 100 µm based
upon various investigations, Fuji Electric has made it
possible to set the thickness lower than that of the
other companies through improved precision of back-
grinding process technology. This was effective in
reducing saturation voltage and turn-on loss, which
were factors contributing to generated loss or inverter
loss.
The load short-circuit waveforms are shown in
Fig. 5.
When the load is short-circuited, devices
breakdown due to the temperature rise resulting from
the generated energy loss.
However, the NPT-type device, having a thick n
-
drift layer, can support the voltage with its wide n
-
drift layer, and the temperature rise which causes
breakdown can be suppressed, resulting in high short-
circuit withstand capability.
Compared with the
withstand capability of 15 µs of a PT-type device, the
NPT-type device has a real capability of 22 µs, which is
2.3 Characteristics of T-series IGBTs
An overview of the characteristics of T-series
IGBTs is presented below. Figure 3 compares VCES
waveforms, namely the CE-forward blocking voltages,
in which the forward blocking voltage of the NPT
Fig. 4 Comparison of turn-off waveforms
Fig.2 Changes in Fuji Electric’s application of NPT technology
Ic =100 A
Vcc =300 V
400
Tj =
Room
temper-
ature
PT
300
1,800 V-NPT
1,400 V-NPT
200
Tj =
125°C
1,200 V-NPT
Device :
600 V/
600 V-NPT
100
0
100 A
Rg = 24 Ω
200 ns
(a) PT-type device
(S-series)
(b) NPT-type device
(T-series)
1995 1996 1997 1998 1999 2000 2001 2002 2003 2004
Year
Fig.5 Comparison of load short-circuit waveforms
Fig.3 Comparison of VCES waveforms of PT-type device and
NPT-type device
Condition
VCC =400 V
2.0×10–3
1.0×10–3
0
2.0×10–3
1.0×10–3
0
VGE =±15 V
Rg =24 Ω
VCE
IC
Tj =125°C
Device :
600V/100A
15 µs
22 µs
0
200
400
600
800
1,000
0
200
400
600
800
1,000
VCES (V)
VCES (V)
IC =250 A/div, VCE =100 V/div, Time : 5 µs/div
(a) PT-type device
(S-series)
(b) NPT-type device
(T-series)
(a) PT-type device
(S-series)
(b) NPT-type device
(T-series)
T-series and U-series IGBT Modules (600 V)
111
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