U-series IGBT Modules (1,200 V)
Yuichi Onozawa
Shinichi Yoshiwatari
Masahito Otsuki
1. Introduction
tion voltage between the collector and emitter
(VCE (sat)) and the turn-off loss of the newly developed
IGBT (trench FS-IGBT). From this figure, it can be
seen that the trade-off of the 1,200 V U-series IGBT is
dramatically improved compared to that of the former
generation S-series IGBT [planer NPT (non punch
Power conversion equipment such as general-use
inverters and uninterruptible power supplies (UPSs) is
continuously challenged by demands for higher effi-
ciency, smaller size, lower cost and lower noise.
Accordingly, power-converting elements for inverter
circuits are also required to have higher performance
and lower cost. At present, IGBTs (insulated gate
bipolar transistors) are the main power-converting
elements used because of their low loss and easy drive
circuit implementation. After commercializing the
IGBT in 1988, Fuji Electric has made efforts to
improve the IGBT in pursuit of lower loss and lower
cost. This paper introduces fifth generation IGBT
modules (U-series), and focuses on the 1,200 V series
used mainly in 400 V AC power lines overseas. Adop-
tion of a trench gate structure and a field stop (FS)
structure has resulted in a large improvement in the
trade-off characteristics of fifth generation IGBTs
compared with those of the fourth generation IGBT (S-
series).
through) -IGBT].
This dramatic improvement in
characteristics has been achieved through adopting a
field stop structure, evolved from an advanced NPT
configuration, and a trench gate structure, acquired
during development of MOSFETs (metal oxide semi-
conductor field effect transistors).
structures is described below.
Each of these
2.1 Field stop structure
Figure 2 shows output characteristics and Fig. 3
shows comparison of cross section of unit cells of a
planar NPT-IGBT and a planar FS-IGBT. An NPT-
IGBT requires a thick drift layer so that the depletion
layer does not contact the collector side during turn-off.
The FS-IGBT does not, however, require such a thick
drift layer as the NPT because a field stop layer to stop
the depletion layer has been fabricated in the FS-IGBT
and accordingly VCE (sat) can be lowered for the FS-
IGBT. Furthermore, the FS-IGBT has fewer excess
carriers because of its thinner drift layer. Moreover,
2. Features of the New IGBTs
Figure 1 shows the trade-off relation of the satura-
Fig.1 Trade-off between VCE (sat) and turn-off loss
Fig.2 Output characteristics
25
160
Room temperature
Trench FS-IGBT
Trench FS-IGBT 1,200 V/150 A
VCC=600 V, IC=150 A, VG=+15 V/–15 V
125°C
125°C
120
20
15
10
5
125°C
Room
Room
tempe-
temperature
Planar
NPT-IGBT
rature
125°C
Room
temperature
80
Trench
Planar NPT-IGBT
FS-IGBT
40
0
1.2
1.4
1.6
1.8
2.0
VCE(sat) (V)
2.2
2.4
2.6
2.8
0
0.5
1.0
1.5
2.0
2.5
3.0
VCE(sat) (V)
U-series IGBT Modules (1,200 V)
115
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