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7MBR50SB060 PDF预览

7MBR50SB060

更新时间: 2024-02-19 06:41:04
品牌 Logo 应用领域
富士电机 - FUJI 双极性晶体管
页数 文件大小 规格书
7页 591K
描述
IGBT(600V/50A/PIM)

7MBR50SB060 数据手册

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IGBT Modules  
7MBR50SB060  
IGBT MODULE (S series)  
600V / 50A / PIM  
Features  
· Low VCE(sat)  
· Compact package  
· P.C. board mount  
· Converter diode bridge, Dynamic brake circuit  
Applications  
· Inverter for motor drive  
· AC and DC servo drive amplifier  
· Uninterruptible power supply  
Maximum ratings and characteristics  
Absolute maximum ratings (Tc=25°C unless without specified)  
Item  
Symbol  
VCES  
VGES  
IC  
Condition  
Rating  
600  
Unit  
V
Collector-Emitter voltage  
Gate-Emitter voltage  
V
±20  
50  
Continuous  
1ms  
A
Collector current  
A
100  
ICP  
A
50  
-IC  
Collector power dissipation  
Collector-Emitter voltage  
Gate-Emitter voltage  
Collector current  
1 device  
W
V
200  
PC  
600  
VCES  
VGES  
IC  
V
±20  
Continuous  
1ms  
A
30  
A
60  
ICP  
Collector power dissipation  
Repetitive peak reverse voltage  
Repetitive peak reverse voltage  
Average output current  
1 device  
W
V
120  
PC  
600  
VRRM  
VRRM  
IO  
V
800  
50Hz/60Hz sine wave  
Tj=150°C, 10ms  
half sine wave  
A
50  
Surge current (Non-Repetitive)  
A
350  
IFSM  
I2t  
I2t  
(Non-Repetitive)  
A2s  
°C  
°C  
V
613  
+150  
-40 to +125  
AC 2500  
AC 2500  
3.5 *1  
Operating junction temperature  
Storage temperature  
Tj  
Tstg  
AC : 1 minute  
Isolation between terminal and copper base *2 Viso  
voltage between thermistor and others *3  
Mounting screw torque  
V
N·m  
*1 Recommendable value : 2.5 to 3.5 N·m (M5)  
*2 All terminals should be connected together when isolation test will be done.  
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24  
should be connected together and shorted to copper base.  

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