生命周期: | Obsolete | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X35 | 针数: | 35 |
Reach Compliance Code: | unknown | 风险等级: | 5.81 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 50 A |
集电极-发射极最大电压: | 1200 V | 配置: | COMPLEX |
JESD-30 代码: | R-XUFM-X35 | 元件数量: | 7 |
端子数量: | 35 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 370 ns | 标称接通时间 (ton): | 530 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
7MBR50UB-120 | ETC |
获取价格 |
IGBTs |
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7MBR50UC060 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, |
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7MBR50UD120 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, |
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7MBR50VA060-50 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor |
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7MBR50VB120-50 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, |
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7MBR50VJC120-50 | FUJI |
获取价格 |
PIM(conv.+Brake+inv.) |
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7MBR50VJC120-53 | FUJI |
获取价格 |
PIM(conv.+Brake+inv.) |
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7MBR50VKB060-50 | FUJI |
获取价格 |
PIM(conv.+Brake+inv.) M727 |
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7MBR50VKD060-50 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor |
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7MBR50VM120-50 | FUJI |
获取价格 |
IGBT MODULE |
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