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75NF75 PDF预览

75NF75

更新时间: 2024-11-18 03:07:51
品牌 Logo 应用领域
伊泰克 - ESTEK /
页数 文件大小 规格书
2页 232K
描述
HEXFET㈢ POWER MOSFET

75NF75 数据手册

 浏览型号75NF75的Datasheet PDF文件第2页 
75NF75  
HEXFET® Power MOSFET  
z
z
z
z
z
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast switching  
VDSS = 75V  
ID25 = 75A  
Ease of Paralleling  
Simple Drive Requirements  
RDS(ON) = 13.0 mΩ  
Description  
Third Generation HEXFETs from International Rectifier provide the designer  
with the best combination of fast switching, ruggedized device design, low  
on-resistance and cost-effectiveness.  
The TO-220 package is universally preferred for all commercial-industrial  
applications at power dissipation levels to approximately 50watts. The low  
thermal resistance and low package cost of the TO-220 contribute to its  
wide acceptance throughout the industry.  
Pin1–Gate  
Pin2–Drain  
Pin3–Source  
Absolute Maximum Ratings  
Parameter  
Max.  
75 ①  
Units  
A
ID@TC=25°C Continuous Drain Current, VGS@10V  
ID@TC=100°C Continuous Drain Current, VGS@10V  
60  
300  
200  
1.5  
±20  
23  
IDM  
Pulsed Drain Current ②  
PD@TC=25°C Power Dissipation  
Linear Derating Factor  
W
W/°C  
V
VGS  
EAR  
dv/dt  
TJ  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ③  
Peak Diode Recovery dv/dt ④  
Operating Junction and  
mJ  
5.9  
V/ns  
55 to +175  
TSTG  
Storage Temperature Range  
°ْ C  
Soldering Temperature, for 10 seconds  
Mounting Torque,6-32 or M3 screw  
300(1.6mm from case)  
10 Ibf . in(1.1N . m)  
Thermal Resistance  
Parameter  
Min.  
Typ.  
Max.  
0.65  
Units  
RθJC  
RθCS  
RθJA  
Junction-to-case  
°ْ C /W  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
62  
1

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