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75N75-TQ2-R PDF预览

75N75-TQ2-R

更新时间: 2024-11-18 12:20:15
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
6页 208K
描述
80Amps, 75Volts N-CHANNEL POWER MOSFET

75N75-TQ2-R 技术参数

生命周期:Active零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.63Is Samacsys:N
雪崩能效等级(Eas):700 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V最大漏极电流 (ID):80 A
最大漏源导通电阻:0.011 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):320 A表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

75N75-TQ2-R 数据手册

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UNISONIC TECHNOLOGIES CO., LTD  
75N75  
Power MOSFET  
80Amps, 75Volts  
N-CHANNEL POWER MOSFET  
1
TO-263  
TO-220  
„
DESCRIPTION  
The UTC 75N75 is n-channel enhancement mode power field  
effect transistors with stable off-state characteristics, fast switching  
speed, low thermal resistance, usually used at telecom and  
computer application.  
1
„
FEATURES  
* RDS(ON) = 9.5m@VGS = 10 V  
1
* Ultra low gate charge ( typical 117 nC )  
* Fast switching capability  
TO-220F  
* Low reverse transfer Capacitance (CRSS= typical 240 pF )  
* Avalanche energy Specified  
Lead-free:  
75N75L  
Halogen-free:75N75G  
* Improved dv/dt capability, high ruggedness  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free Plating  
75N75L-TA3-T  
75N75L-TF3-T  
75N75L-TQ2-T  
75N75L-TQ2-R  
Halogen Free  
75N75G-TA3-T  
75N75G-TF3-T  
75N75G-TQ2-T  
75N75G-TQ2-R  
1
2
D
D
D
D
3
S
S
S
S
75N75-TA3-T  
75N75-TF3-T  
75N75-TQ2-T  
75N75-TQ2-R  
TO-220  
TO-220F  
TO-263  
TO-263  
Tube  
Tube  
G
G
G
G
Tube  
Tape Reel  
Note: Pin Assignment: G: Gate D: Drain S: Source  
www.unisonic.com.tw  
1 of 6  
Copyright © 2009 Unisonic Technologies Co., Ltd.  
QW-R502-097.E  

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