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74LVC2G32DP-Q100 PDF预览

74LVC2G32DP-Q100

更新时间: 2024-11-17 01:14:39
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管逻辑集成电路
页数 文件大小 规格书
14页 786K
描述
Dual 2-input OR gate

74LVC2G32DP-Q100 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TSSOP-8Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.6
系列:LVC/LCX/ZJESD-30 代码:S-PDSO-G8
JESD-609代码:e4长度:3 mm
逻辑集成电路类型:OR GATE湿度敏感等级:1
功能数量:2输入次数:2
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
传播延迟(tpd):11 ns筛选级别:AEC-Q100
座面最大高度:1.1 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:3 mmBase Number Matches:1

74LVC2G32DP-Q100 数据手册

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74LVC2G32-Q100  
Dual 2-input OR gate  
Rev. 2 — 14 December 2016  
Product data sheet  
1. General description  
The 74LVC2G32-Q100 provides a 2-input OR gate function.  
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these  
devices as translators in a mixed 3.3 V and 5 V environment.  
This device is fully specified for partial power-down applications using IOFF. The IOFF  
circuitry disables the output, preventing a damaging backflow current through the device  
when it is powered down.  
This product has been qualified to the Automotive Electronics Council (AEC) standard  
Q100 (Grade 1) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 1)  
Specified from 40 C to +85 C and from 40 C to +125 C  
Wide supply voltage range from 1.65 V to 5.5 V  
5 V tolerant outputs in the Power-down mode  
High noise immunity  
24 mA output drive (VCC = 3.0 V)  
CMOS low power consumption  
Complies with JEDEC standard:  
JESD8-7 (1.65 V to 1.95 V)  
JESD8-5 (2.3 V to 2.7 V)  
JESD8-B/JESD36 (2.7 V to 3.6 V)  
Latch-up performance exceeds 250 mA  
Direct interface with TTL levels  
Inputs accept voltages up to 5 V  
ESD protection:  
MIL-STD-883, method 3015 exceeds 2000 V  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )  

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