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74LVC1G32GV-Q100H PDF预览

74LVC1G32GV-Q100H

更新时间: 2024-02-08 17:33:50
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
13页 104K
描述
74LVC1G32-Q100 - Single 2-input OR gate TSOP 5-Pin

74LVC1G32GV-Q100H 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TSOP包装说明:TSSOP,
针数:5Reach Compliance Code:compliant
风险等级:5.68系列:LVC/LCX/Z
JESD-30 代码:R-PDSO-G5JESD-609代码:e3
长度:2.9 mm逻辑集成电路类型:OR GATE
功能数量:1输入次数:2
端子数量:5最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH传播延迟(tpd):10.5 ns
筛选级别:AEC-Q100座面最大高度:1.1 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:TIN端子形式:GULL WING
端子节距:0.95 mm端子位置:DUAL
宽度:1.5 mmBase Number Matches:1

74LVC1G32GV-Q100H 数据手册

 浏览型号74LVC1G32GV-Q100H的Datasheet PDF文件第2页浏览型号74LVC1G32GV-Q100H的Datasheet PDF文件第3页浏览型号74LVC1G32GV-Q100H的Datasheet PDF文件第4页浏览型号74LVC1G32GV-Q100H的Datasheet PDF文件第5页浏览型号74LVC1G32GV-Q100H的Datasheet PDF文件第6页浏览型号74LVC1G32GV-Q100H的Datasheet PDF文件第7页 
74LVC1G32-Q100  
Single 2-input OR gate  
Rev. 1 — 7 August 2012  
Product data sheet  
1. General description  
The 74LVC1G32-Q100 provides one 2-input OR function.  
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these  
devices as translators in mixed 3.3 V and 5 V applications.  
Schmitt trigger action at all inputs makes the circuit tolerant of slower input rise and fall  
time.  
This device is fully specified for partial power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
This product has been qualified to the Automotive Electronics Council (AEC) standard  
Q100 (Grade 1) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 1)  
Specified from 40 C to +85 C and from 40 C to +125 C  
Wide supply voltage range from 1.65 V to 5.5 V  
High noise immunity  
Complies with JEDEC standard:  
JESD8-7 (1.65 V to 1.95 V)  
JESD8-5 (2.3 V to 2.7 V)  
JESD8-B/JESD36 (2.7 V to 3.6 V)  
ESD protection:  
MIL-STD-883, method 3015 exceeds 2000 V  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )  
24 mA output drive (VCC = 3.0 V)  
CMOS low power consumption  
Latch-up performance exceeds 250 mA  
Direct interface with TTL levels  
Inputs accept voltages up to 5 V  
Multiple package options  
 
 

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