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74LVC1G332GF PDF预览

74LVC1G332GF

更新时间: 2024-02-20 17:11:02
品牌 Logo 应用领域
恩智浦 - NXP 逻辑集成电路光电二极管
页数 文件大小 规格书
15页 82K
描述
Single 3-input OR gate

74LVC1G332GF 技术参数

生命周期:Active包装说明:HVBCC,
Reach Compliance Code:compliantFactory Lead Time:13 weeks
风险等级:1.58Is Samacsys:N
系列:LVC/LCX/ZJESD-30 代码:R-PBCC-B6
长度:1 mm逻辑集成电路类型:OR GATE
功能数量:1输入次数:3
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:HVBCC封装形状:RECTANGULAR
封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度(摄氏度):NOT SPECIFIED
传播延迟(tpd):21.5 ns座面最大高度:0.35 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:BUTT端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:0.8 mm
Base Number Matches:1

74LVC1G332GF 数据手册

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74LVC1G332  
Single 3-input OR gate  
Rev. 01 — 11 October 2006  
Product data sheet  
1. General description  
The 74LVC1G332 is a high-performance, low-power, low-voltage, Si-gate CMOS device,  
superior to most advanced CMOS compatible TTL families.  
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these  
devices as translators in mixed 3.3 V and 5 V applications.  
Schmitt trigger action at all inputs makes the circuit tolerant of slower input rise and fall  
time.  
This device is fully specified for partial power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
The 74LVC1G332 provides one 3-input OR function.  
2. Features  
I Wide supply voltage range from 1.65 V to 5.5 V  
I High noise immunity  
I Complies with JEDEC standard:  
N JESD8-7 (1.65 V to 1.95 V)  
N JESD8-5 (2.3 V to 2.7 V)  
N JESD8B/JESD36 (2.7 V to 3.6 V)  
I ±24 mA output drive (VCC = 3.0 V)  
I CMOS low power consumption  
I Latch-up performance exceeds 250 mA  
I Direct interface with TTL levels  
I Inputs accept voltages up to 5 V  
I ESD protection:  
N HBM JESD22-A114-D exceeds 2000 V  
N MM JESD22-A115-A exceeds 200 V  
N CDM JESD22-C101-C exceeds 1000 V  
I Multiple package options  
I Specified from 40 °C to +85 °C and 40 °C to +125 °C  

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