NXP Semiconductors
74HC3G04-Q100; 74HCT3G04-Q100
Inverter
Table 7.
Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 C.
Symbol Parameter
Conditions
25 C
40 C to +85 C 40 C to +125 C Unit
Min Typ Max
Min
Max
Min
Max
74HCT3G04-Q100
VIH
VIL
HIGH-level
input voltage
VCC = 4.5 V to 5.5 V
VCC = 4.5 V to 5.5 V
2.0
-
1.6
1.2
-
2.0
-
-
2.0
-
-
V
V
LOW-level
0.8
0.8
0.8
input voltage
VOH
HIGH-level
VI = VIH or VIL
output voltage
IO = 20 A; VCC = 4.5 V
IO = 4.0 mA; VCC = 4.5 V
VI = VIH or VIL
4.4
4.5
-
-
4.4
-
-
4.4
3.7
-
-
V
V
4.18 4.32
4.13
VOL
LOW-level
output voltage
IO = 20 A; VCC = 4.5 V
IO = 4.0 mA; VCC = 4.5 V
-
-
-
0
0.1
-
-
-
0.1
-
-
-
0.1
0.4
V
0.15 0.26
0.33
1.0
V
II
input leakage VI = VCC or GND; VCC = 5.5 V
current
-
-
-
0.1
1.0
A
ICC
ICC
supply current per input pin; VCC = 5.5 V;
VI = VCC or GND; IO = 0 A;
-
-
1.0
-
-
10
-
-
20
A
A
additional
per input;
300
375
410
supply current VCC = 4.5 V to 5.5 V;
VI = VCC 2.1 V; IO = 0 A
CI
input
-
1.5
-
-
-
-
-
pF
capacitance
11. Dynamic characteristics
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); all typical values are measured at Tamb = 25 C; for test circuit, see Figure 7.
Symbol Parameter Conditions
74HC3G04-Q100
25 C
40 C to +85 C 40 C to +125 C Unit
Min
Typ
Max
Min
Max
Min
Max
[1]
[2]
[3]
tpd
propagation nA to nY; see Figure 6
delay
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
see Figure 6
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
VI = GND to VCC
-
-
-
22
8
75
15
13
-
-
-
90
18
16
-
-
-
110
22
ns
ns
ns
6
20
tt
transition
time
-
-
-
-
18
6
75
15
13
-
-
-
-
-
95
19
16
-
-
-
-
-
125
25
20
-
ns
ns
ns
pF
5
CPD
power
9
dissipation
capacitance
74HC_HCT3G04_Q100
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 18 November 2013
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