NXP Semiconductors
74HC3G04-Q100; 74HCT3G04-Q100
Inverter
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); all typical values are measured at Tamb = 25 C; for test circuit, see Figure 7.
Symbol Parameter Conditions
25 C
40 C to +85 C 40 C to +125 C Unit
Min
Typ
Max
Min
Max
Min
Max
74HCT3G04-Q100
[1]
tpd
propagation nA to nY; see Figure 6
delay
VCC = 4.5 V
-
-
10
6
18
15
-
-
23
19
-
-
29
22
ns
ns
[2]
[3]
tt
transition
time
VCC = 4.5 V; see Figure 6
CPD
power
VI = GND to VCC 1.5 V
-
9
-
-
-
-
-
pF
dissipation
capacitance
[1] tpd is the same as tPLH and tPHL
[2] tt is the same as tTLH and tTHL
[3] PD is used to determine the dynamic power dissipation (PD in W).
.
.
C
PD = CPD VCC2 fi N + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL VCC2 fo) = sum of outputs.
12. Waveforms
V
I
V
V
nA input
GND
M
M
t
t
PHL
PLH
V
OH
90 %
V
V
nY output
M
M
10 %
V
OL
t
t
TLH
THL
mna722
Measurement points are given in Table 9.
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.
Fig 6. The data input (nA) to output (nY) propagation delays
Table 9.
Type
Measurement points
Input
VM
Output
VM
74HC3G04-Q100
74HCT3G04-Q100
0.5 VCC
1.3 V
0.5 VCC
1.3 V
74HC_HCT3G04_Q100
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 18 November 2013
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