74HCT2G00DP-G

更新时间： 2024-01-22 22:29:00

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恩智浦 - NXP		/
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74HCT2G00DP-G 数据手册

74HC2G00; 74HCT2G00

Dual 2-input NAND gate

Rev. 04 — 3 July 2008

Product data sheet

1. General description

The 74HC2G00 and 74HCT2G00 are high-speed Si-gate CMOS devices. They provide

two 2-input NAND gates.

The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.

The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.

2. Features

I Wide supply voltage range from 2.0 V to 6.0 V

I Symmetrical output impedance

I High noise immunity

I Low power dissipation

I Balanced propagation delays

I Multiple package options

I ESD protection:

N HBM JESD22-A114E exceeds 2000 V

N MM JESD22-A115-A exceeds 200 V

I Speciﬁed from −40 °C to +85 °C and −40 °C to +125 °C

3. Ordering information

Table 1.

Ordering information

Type number

Package

Temperature range Name

Description

Version

74HC2G00DP

74HCT2G00DP

74HC2G00DC

74HCT2G00DC

74HC2G00GD

74HCT2G00GD

−40 °C to +125 °C

TSSOP8

plastic thin shrink small outline package; 8 leads;

body width 3 mm; lead length 0.5 mm

SOT505-2

VSSOP8

plastic very thin shrink small outline package; 8 leads; SOT765-1

body width 2.3 mm

XSON8U plastic extremely thin small outline package; no leads; SOT996-2

8 terminals; UTLP based; body 3 × 2 × 0.5 mm

12 3 4 5 6 7...13

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