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74HC30D,652 PDF预览

74HC30D,652

更新时间: 2024-01-29 10:44:45
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管逻辑集成电路
页数 文件大小 规格书
16页 115K
描述
74HC(T)30 - 8-input NAND gate SOIC 14-Pin

74HC30D,652 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC针数:14
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:3.54
系列:HC/UHJESD-30 代码:R-PDSO-G14
JESD-609代码:e4长度:8.65 mm
负载电容(CL):50 pF逻辑集成电路类型:NAND GATE
最大I(ol):0.004 A湿度敏感等级:1
功能数量:1输入次数:8
端子数量:14最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP14,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:BULK PACK峰值回流温度(摄氏度):260
电源:2/6 VProp。Delay @ Nom-Sup:39 ns
传播延迟(tpd):39 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:1.75 mm
子类别:Gates最大供电电压 (Vsup):6 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:NICKEL PALLADIUM GOLD
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:3.9 mmBase Number Matches:1

74HC30D,652 数据手册

 浏览型号74HC30D,652的Datasheet PDF文件第3页浏览型号74HC30D,652的Datasheet PDF文件第4页浏览型号74HC30D,652的Datasheet PDF文件第5页浏览型号74HC30D,652的Datasheet PDF文件第7页浏览型号74HC30D,652的Datasheet PDF文件第8页浏览型号74HC30D,652的Datasheet PDF文件第9页 
74HC30; 74HCT30  
NXP Semiconductors  
8-input NAND gate  
Table 6.  
Static characteristics …continued  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).  
Symbol Parameter  
Conditions  
25 C  
40 C to +85 C 40 C to +125 C Unit  
Min Typ Max  
Min  
Max  
Min  
Max  
CI  
input  
-
3.5  
-
-
-
-
-
pF  
capacitance  
74HCT30  
VIH  
HIGH-level  
input voltage  
VCC = 4.5 V to 5.5 V  
VCC = 4.5 V to 5.5 V  
2.0  
-
1.6  
1.2  
-
2.0  
-
-
2.0  
-
-
V
V
VIL  
LOW-level  
0.8  
0.8  
0.8  
input voltage  
VOH  
HIGH-level  
output voltage  
VI = VIH or VIL; VCC = 4.5 V  
IO = 20 A  
4.4  
4.5  
-
-
4.4  
-
-
4.4  
3.7  
-
-
V
V
IO = 4.0 mA  
3.98 4.32  
3.84  
VOL  
LOW-level  
output voltage  
VI = VIH or VIL; VCC = 4.5 V  
IO = 20 A  
-
-
-
0
0.1  
-
-
-
0.1  
0.33  
1  
-
-
-
0.1  
0.4  
1  
V
IO = 4.0 mA  
0.15 0.26  
V
II  
input leakage  
current  
VI = VCC or GND;  
VCC = 5.5 V  
-
0.1  
A  
ICC  
ICC  
supply current VI = VCC or GND; IO = 0 A;  
VCC = 5.5 V  
-
-
-
2.0  
-
-
20  
-
-
40  
A  
A  
additional  
per input pin;  
60  
216  
275  
294  
supply current VI = VCC 2.4 V; IO = 0 A;  
other inputs at VCC or GND;  
VCC = 4.5 V to 5.5 V  
CI  
input  
-
3.5  
-
-
-
-
-
pF  
capacitance  
10. Dynamic characteristics  
Table 7.  
Dynamic characteristics  
GND = 0 V; CL = 50 pF; for load circuit see Figure 6.  
Symbol Parameter  
Conditions  
25 C  
40 C to +125 C Unit  
Max Max  
(85 C) (125 C)  
Min  
Typ  
Max  
74HC30  
[1]  
tpd  
propagation delay A, B, C, D, E, F, G, H to Y;  
see Figure 5  
VCC = 2.0 V  
-
-
-
-
41  
15  
12  
12  
130  
26  
-
165  
33  
-
195  
39  
-
ns  
ns  
ns  
ns  
VCC = 4.5 V  
VCC = 5.0 V; CL = 15 pF  
VCC = 6.0 V  
22  
28  
33  
[2]  
tt  
transition time  
see Figure 5  
VCC = 2.0 V  
VCC = 4.5 V  
VCC = 6.0 V  
-
-
-
19  
7
75  
15  
13  
95  
19  
16  
110  
22  
ns  
ns  
ns  
6
19  
74HC_HCT30  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 6 — 27 December 2012  
6 of 16  
 

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