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74CB3Q3305DCURG4 PDF预览

74CB3Q3305DCURG4

更新时间： 2024-11-06 06:31:51
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德州仪器 - TI 开关
页数 文件大小 规格书
13页 456K
描述
DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH

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74CB3Q3305DCURG4 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：VSSOP, TSSOP8,.12,20针数：8
Reach Compliance Code：compliantHTS代码：8542.39.00.01
Factory Lead Time：6 weeks风险等级：1.33
其他特性：ALSO OPERATES WITH 3.3V SUPPLY控制类型：ENABLE HIGH
计数方向：BIDIRECTIONAL系列：CB3Q/3VH/3C/2B
JESD-30 代码：R-PDSO-G8JESD-609代码：e4
长度：2.3 mm逻辑集成电路类型：BUS DRIVER
湿度敏感等级：1位数：1
功能数量：2端口数量：2
端子数量：8最高工作温度：85 °C
最低工作温度：-40 °C输出特性：3-STATE
输出极性：TRUE封装主体材料：PLASTIC/EPOXY
封装代码：VSSOP封装等效代码：TSSOP8,.12,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
包装方法：TR峰值回流温度（摄氏度）：260
电源：2.5/3.3 V最大电源电流（ICC）：0.7 mA
Prop。Delay @ Nom-Sup：0.09 ns传播延迟（tpd）：0.15 ns
认证状态：Not Qualified座面最大高度：0.9 mm
子类别：Bus Driver/Transceivers最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.3 V标称供电电压 (Vsup)：2.5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：2 mmBase Number Matches：1

74CB3Q3305DCURG4 数据手册

 浏览型号74CB3Q3305DCURG4的Datasheet PDF文件第2页浏览型号74CB3Q3305DCURG4的Datasheet PDF文件第3页浏览型号74CB3Q3305DCURG4的Datasheet PDF文件第4页浏览型号74CB3Q3305DCURG4的Datasheet PDF文件第5页浏览型号74CB3Q3305DCURG4的Datasheet PDF文件第6页浏览型号74CB3Q3305DCURG4的Datasheet PDF文件第7页 
SN74CB3Q3305  
www.ti.com  
SCDS141B –OCTOBER 2003–REVISED OCTOBER 2009  
DUAL FET BUS SWITCH  
2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH  
Check for Samples: SN74CB3Q3305  
1
FEATURES  
•
High-Bandwidth Data Path (up to 500 MHz)  
PW PACKAGE  
(TOP VIEW)  
For additional information regarding the performance  
characteristics of the CB3Q family, refer to the TI application  
report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature  
number SCDA008.  
1
2
3
4
8
7
6
5
1OE  
1A  
V
CC  
2OE  
2B  
•
5-V Tolerant I/Os With Device Powered Up or  
Powered Down  
1B  
GND  
2A  
•
Low and Flat ON-State Resistance (ron)  
Characteristics Over Operating Range  
(ron = 3 Ω Typ)  
DCU PACKAGE  
(TOP VIEW)  
•
Rail-to-Rail Switching on Data I/O Ports  
–
–
0- to 5-V Switching With 3.3-V VCC  
0- to 3.3-V Switching With 2.5-V VCC  
V
1
2
3
4
8
7
6
5
1OE  
1A  
CC  
2OE  
2B  
•
•
Bidirectional Data Flow With Near-Zero  
Propagation Delay  
1B  
Low Input/Output Capacitance Minimizes  
Loading and Signal Distortion  
(Cio(OFF) = 3.5 pF Typ)  
GND  
2A  
•
•
Fast Switching Frequency (fOE = 20 MHz Max)  
DESCRIPTION/ORDERING INFORMATION  
Data and Control Inputs Provide Undershoot  
Clamp Diodes  
The SN74CB3Q3305 is a high-bandwidth FET bus  
switch utilizing a charge pump to elevate the gate  
voltage of the pass transistor, providing a low and flat  
ON-state resistance (ron). The low and flat ON-state  
resistance allows for minimal propagation delay and  
supports rail-to-rail switching on the data input/output  
(I/O) ports. The device also features low data I/O  
capacitance to minimize capacitive loading and signal  
distortion on the data bus. Specifically designed to  
•
•
•
Low Power Consumption (ICC = 0.25 mA Typ)  
VCC Operating Range From 2.3 V to 3.6 V  
Data I/Os Support 0- to 5-V Signaling Levels  
(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)  
•
•
•
•
Control Inputs Can Be Driven by TTL or  
5-V/3.3-V CMOS Outputs  
Ioff Supports Partial-Power-Down Mode  
Operation  
support  
high-bandwidth  
applications,  
the  
SN74CB3Q3305 provides an optimized interface  
solution ideally suited for broadband communications,  
networking, and data-intensive computing systems.  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
The SN74CB3Q3305 is organized as two 1-bit  
switches with separate output-enable (1OE, 2OE)  
inputs. It can be used as two 1-bit bus switches or as  
one 2-bit bus switch. When OE is high, the  
associated 1-bit bus switch is ON and the A port is  
connected to the B port, allowing bidirectional data  
flow between ports. When OE is low, the associated  
1-bit bus switch is OFF and a high-impedance state  
exists between the A and B ports.  
ESD Performance Tested Per JESD 22  
–
2000-V Human-Body Model  
(A114-B, Class II)  
–
1000-V Charged-Device Model (C101)  
•
Supports Both Digital and Analog  
Applications: USB Interface, Differential Signal  
Interface, Bus Isolation, Low-Distortion Signal  
Gating  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2003–2009, Texas Instruments Incorporated  
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74CB3Q3305DCURG4 替代型号

型号 品牌 替代类型 描述 数据表
74CB3Q3305DCURE4 TI

完全替代

 DUAL FET BUS SWITCH 2.5V/3.3V LOW VOLTAGE HIGH BANDWIDTH BUS SWITCH

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