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74CB3T3306DCURG4 PDF预览

74CB3T3306DCURG4

更新时间： 2023-06-19 15:37:29
品牌 Logo 应用领域
德州仪器 - TI 开关驱动光电二极管逻辑集成电路总线驱动器总线收发器转换器电平转换器
页数 文件大小 规格书
12页 197K
描述
具有电平转换器的 3.3V、1:1 (SPST)、2 通道 FET 总线开关 | DCU | 8 | -40 to 85

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74CB3T3306DCURG4 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：SOIC
包装说明：VSSOP-8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：1 week
风险等级：1.68Is Samacsys：N
其他特性：ALSO OPERATES AT 3.3V SUPPLY控制类型：ENABLE LOW
计数方向：BIDIRECTIONAL系列：CB3T/3VT
JESD-30 代码：R-PDSO-G8JESD-609代码：e4
长度：2.3 mm逻辑集成电路类型：BUS DRIVER
湿度敏感等级：1位数：1
功能数量：2端口数量：2
端子数量：8最高工作温度：85 °C
最低工作温度：-40 °C输出特性：3-STATE
输出极性：TRUE封装主体材料：PLASTIC/EPOXY
封装代码：VSSOP封装等效代码：TSSOP8,.12,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
包装方法：TR峰值回流温度（摄氏度）：260
电源：2.5/3.3 V最大电源电流（ICC）：0.02 mA
Prop。Delay @ Nom-Sup：0.15 ns传播延迟（tpd）：0.25 ns
认证状态：Not Qualified座面最大高度：0.9 mm
子类别：Bus Driver/Transceivers最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.3 V标称供电电压 (Vsup)：2.5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
翻译：N/A宽度：2 mm
Base Number Matches：1

74CB3T3306DCURG4 数据手册

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SCDS119A − JANUARY 2003 − REVISED OCTOBER 2003  
D
D
Output Voltage Translation Tracks V  
D
D
V
Operating Range From 2.3 V to 3.6 V  
CC  
CC  
Supports Mixed-Mode Signal Operation On  
All Data I/O Ports  
− 5-V Input Down To 3.3-V Output Level  
Data I/Os Support 0 to 5-V Signaling Levels  
(0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)  
D
D
D
D
Control Inputs Can be Driven by TTL or  
5-V/3.3-V CMOS Outputs  
Shift With 3.3-V V  
CC  
− 5-V/3.3-V Input Down To 2.5-V Output  
Level Shift With 2.5-V V  
I
Supports Partial-Power-Down Mode  
off  
CC  
Operation  
D
D
D
D
D
D
5-V Tolerant I/Os With Device Powered-Up  
or Powered-Down  
Latch-Up Performance Exceeds 250 mA Per  
JESD 17  
Bidirectional Data Flow, With Near-Zero  
Propagation Delay  
ESD Performance Tested Per JESD 22  
− 2000-V Human-Body Model  
(A114-B, Class II)  
Low ON-State Resistance (r  
)
on  
Characteristics (r = 5 Ω Typical)  
on  
− 1000-V Charged-Device Model (C101)  
Low Input/Output Capacitance Minimizes  
D
D
Supports Digital Applications: Level  
Translation, USB Interface, Bus Isolation  
Loading (C  
= 4.5 pF Typical)  
io(OFF)  
Data and Control Inputs Provide  
Undershoot Clamp Diodes  
Ideal for Low-Power Portable Equipment  
Low Power Consumption  
(I  
= 20 µA Max)  
CC  
DCT OR DCU PACKAGE  
(TOP VIEW)  
1OE  
1A  
1B  
1
2
3
4
8
7
6
5
V
CC  
2OE  
2B  
2A  
GND  
description/ordering information  
The SN74CB3T3306 is a high-speed TTL-compatible FET bus switch with low ON-state resistance (r ),  
on  
allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O  
ports by providing voltage translation that tracks V . The SN74CB3T3306 supports systems using 5-V TTL,  
CC  
3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see Figure 1).  
The SN74CB3T3306 is organized as two 1-bit bus switches with separate ouput-enable (1OE, 2OE) inputs. It  
can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is low, the associated 1-bit bus switch  
is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high,  
the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.  
ORDERING INFORMATION  
ORDERABLE  
PART NUMBER  
TOP-SIDE  
†
PACKAGE  
T
A
‡
MARKING  
WA6_ _ _  
WA6_  
SSOP − DCT  
Tape and reel SN74CB3T3306DCTR  
Tape and reel SN74CB3T3306DCUR  
−40°C to 85°C  
VSSOP − DCU  
†
‡
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design  
guidelines are available at www.ti.com/sc/package.  
DCT: The actual top-side marking has three additional characters that designate the year, month, and  
assembly/test site.  
DCU: The actual top-side marking has one additional character that designates the assembly/test site.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
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Copyright 2003, Texas Instruments Incorporated  
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1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...12

中文翻译

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74CB3T3306DCURG4 替代型号

型号 品牌 替代类型 描述 数据表
SN74CB3T3306DCUR TI

完全替代

 DUAL FET BUS SWITCH

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