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74AUP1G14GM,115 PDF预览

74AUP1G14GM,115

更新时间: 2024-11-09 14:47:03
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
24页 364K
描述
74AUP1G14 - Low-power Schmitt trigger inverter SON 6-Pin

74AUP1G14GM,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SON包装说明:VSON, SOLCC6,.04,20
针数:6Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.47
系列:AUP/ULP/VJESD-30 代码:R-PDSO-N6
JESD-609代码:e3长度:1.45 mm
负载电容(CL):30 pF逻辑集成电路类型:INVERTER
最大I(ol):0.0017 A湿度敏感等级:1
功能数量:1输入次数:1
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:VSON封装等效代码:SOLCC6,.04,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
包装方法:TAPE AND REEL峰值回流温度(摄氏度):260
电源:1.2/3.3 VProp。Delay @ Nom-Sup:20 ns
传播延迟(tpd):20 ns认证状态:Not Qualified
施密特触发器:YES座面最大高度:0.5 mm
子类别:Gates最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):0.8 V标称供电电压 (Vsup):1.1 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:1 mmBase Number Matches:1

74AUP1G14GM,115 数据手册

 浏览型号74AUP1G14GM,115的Datasheet PDF文件第2页浏览型号74AUP1G14GM,115的Datasheet PDF文件第3页浏览型号74AUP1G14GM,115的Datasheet PDF文件第4页浏览型号74AUP1G14GM,115的Datasheet PDF文件第5页浏览型号74AUP1G14GM,115的Datasheet PDF文件第6页浏览型号74AUP1G14GM,115的Datasheet PDF文件第7页 
74AUP1G14  
Low-power Schmitt trigger inverter  
Rev. 6 — 28 June 2012  
Product data sheet  
1. General description  
The 74AUP1G14 provides a single inverting Schmitt trigger which accepts standard input  
signals. It is capable of transforming slowly changing input signals into sharply defined,  
jitter-free output signals.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial Power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
The inputs switch at different points for positive and negative-going signals. The difference  
between the positive voltage VT+ and the negative voltage VTis defined as the input  
hysteresis voltage VH.  
2. Features and benefits  
Wide supply voltage range from 0.8 V to 3.6 V  
High noise immunity  
ESD protection:  
HBM JESD22-A114F Class 3A exceeds 5000 V  
MM JESD22-A115-A exceeds 200 V  
CDM JESD22-C101E exceeds 1000 V  
Low static power consumption; ICC = 0.9 μA (maximum)  
Latch-up performance exceeds 100 mA per JESD 78 Class II  
Inputs accept voltages up to 3.6 V  
Low noise overshoot and undershoot < 10 % of VCC  
IOFF circuitry provides partial Power-down mode operation  
Multiple package options  
Specified from 40 °C to +85 °C and 40 °C to +125 °C  
3. Applications  
Wave and pulse shaper  
Astable multivibrator  
Monostable multivibrator  
 
 
 

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