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74AUP1G132GW-Q100 PDF预览

74AUP1G132GW-Q100

更新时间: 2024-02-22 12:44:07
品牌 Logo 应用领域
安世 - NEXPERIA 逻辑集成电路
页数 文件大小 规格书
15页 238K
描述
Low-power 2-input NAND Schmitt triggerProduction

74AUP1G132GW-Q100 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.63逻辑集成电路类型:NAND GATE
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:30Base Number Matches:1

74AUP1G132GW-Q100 数据手册

 浏览型号74AUP1G132GW-Q100的Datasheet PDF文件第2页浏览型号74AUP1G132GW-Q100的Datasheet PDF文件第3页浏览型号74AUP1G132GW-Q100的Datasheet PDF文件第4页浏览型号74AUP1G132GW-Q100的Datasheet PDF文件第5页浏览型号74AUP1G132GW-Q100的Datasheet PDF文件第6页浏览型号74AUP1G132GW-Q100的Datasheet PDF文件第7页 
74AUP1G132-Q100  
Low-power 2-input NAND Schmitt trigger  
Rev. 4.1 — 11 July 2023  
Product data sheet  
1. General description  
The 74AUP1G132-Q100 is a single 2-input NAND gate with Schmitt-trigger inputs. Schmitt-trigger  
action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures  
very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial power down applications using IOFF. The IOFF circuitry  
disables the output, preventing the potentially damaging backflow current through the device when  
it is powered down.  
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100  
(Grade 1) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 1)  
Specified from -40 °C to +85 °C and from -40 °C to +125 °C  
Wide supply voltage range from 0.8 V to 3.6 V  
CMOS low power dissipation  
High noise immunity  
Overvoltage tolerant inputs to 3.6 V  
Low static power consumption; ICC = 0.9 μA (maximum)  
Latch-up performance exceeds 100 mA per JESD 78 Class II  
Low noise overshoot and undershoot < 10 % of VCC  
IOFF circuitry provides partial Power-down mode operation  
Complies with JEDEC standards:  
JESD8-12 (0.8 V to 1.3 V)  
JESD8-11 (0.9 V to 1.65 V)  
JESD8-7 (1.65 V to 1.95 V)  
JESD8-5 (2.3 V to 2.7 V)  
JESD8C (2.7 V to 3.6 V )  
ESD protection:  
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V  
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V  
3. Applications  
Wave and pulse shaper  
Astable multivibrator  
Monostable multivibrator.  
 
 
 

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