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74ALVTH16245VRG4 PDF预览

74ALVTH16245VRG4

更新时间： 2024-11-14 02:58:51
品牌 Logo 应用领域
德州仪器 - TI 信息通信管理光电二极管输出元件逻辑集成电路触发器
页数 文件大小 规格书
15页 394K
描述
2.5-V/3.3V 16-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

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74ALVTH16245VRG4 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：TSSOP, TSSOP48,.25,16针数：48
Reach Compliance Code：compliantHTS代码：8542.39.00.01
Factory Lead Time：6 weeks风险等级：5.45
其他特性：ALSO OPERATES AT 3.3V SUPPLY控制类型：COMMON CONTROL
计数方向：BIDIRECTIONAL系列：ALVT
JESD-30 代码：R-PDSO-G48JESD-609代码：e4
长度：9.7 mm负载电容（CL）：30 pF
逻辑集成电路类型：BUS TRANSCEIVER最大I（ol）：0.064 A
湿度敏感等级：1位数：8
功能数量：2端口数量：2
端子数量：48最高工作温度：85 °C
最低工作温度：-40 °C输出特性：3-STATE
输出极性：TRUE封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP48,.25,16
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法：TR峰值回流温度（摄氏度）：260
电源：2.5/3.3 V最大电源电流（ICC）：5 mA
Prop。Delay @ Nom-Sup：3.6 ns传播延迟（tpd）：3.6 ns
认证状态：Not Qualified施密特触发器：No
座面最大高度：1.2 mm子类别：Bus Driver/Transceivers
最大供电电压 (Vsup)：2.7 V最小供电电压 (Vsup)：2.3 V
标称供电电压 (Vsup)：2.5 V表面贴装：YES
技术：BICMOS温度等级：INDUSTRIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子节距：0.4 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED翻译：N/A
宽度：4.4 mmBase Number Matches：1

74ALVTH16245VRG4 数据手册

 浏览型号74ALVTH16245VRG4的Datasheet PDF文件第2页浏览型号74ALVTH16245VRG4的Datasheet PDF文件第3页浏览型号74ALVTH16245VRG4的Datasheet PDF文件第4页浏览型号74ALVTH16245VRG4的Datasheet PDF文件第5页浏览型号74ALVTH16245VRG4的Datasheet PDF文件第6页浏览型号74ALVTH16245VRG4的Datasheet PDF文件第7页 
SN54ALVTH16245, SN74ALVTH16245  
2.5-V/3.3-V 16-BIT BUS TRANSCEIVERS  
WITH 3-STATE OUTPUTS  
SCES066G – JUNE 1996 – REVISED APRIL 2002  
SN54ALVTH16245 . . . WD PACKAGE  
SN74ALVTH16245 . . . DGG, DGV, OR DL PACKAGE  
(TOP VIEW)  
State-of-the-Art Advanced BiCMOS  
Technology (ABT) Widebus Design for  
2.5-V and 3.3-V Operation and Low  
Static-Power Dissipation  
1
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
1DIR  
1B1  
1B2  
GND  
1B3  
1B4  
1OE  
1A1  
1A2  
GND  
1A3  
1A4  
Support Mixed-Mode Signal Operation (5-V  
Input and Output Voltages With 2.3-V to  
2
3
3.6-V V  
)
CC  
4
Typical V  
<0.8 V at V  
(Output Ground Bounce)  
5
OLP  
CC  
= 3.3 V, T = 25°C  
6
A
7
V
V
High Drive (–32/64 mA at 3.3-V V  
)
CC  
CC  
CC  
8
1B5  
1B6  
GND  
1B7  
1B8  
2B1  
2B2  
GND  
2B3  
2B4  
1A5  
1A6  
GND  
1A7  
1A8  
2A1  
2A2  
GND  
2A3  
2A4  
I
and Power-Up 3-State Support Hot  
off  
9
Insertion  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
Use Bus Hold on Data Inputs in Place of  
External Pullup/Pulldown Resistors to  
Prevent the Bus From Floating  
Flow-Through Architecture Facilitates  
Printed Circuit Board Layout  
Distributed V  
High-Speed Switching Noise  
and GND Pins Minimize  
CC  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
V
V
CC  
CC  
2B5  
2B6  
GND  
2B7  
2B8  
2A5  
2A6  
GND  
2A7  
2A8  
2OE  
description  
The ’ALVTH16245 devices are 16-bit (dual-octal)  
noninverting 3-state transceivers designed for  
2DIR  
2.5-V or 3.3-V V  
operation, but with the  
CC  
capability to provide a TTL interface to a 5-V  
system environment.  
These devices can be used as two 8-bit transceivers or one 16-bit transceiver. They allow data transmission  
from the A bus to the B bus or from the B bus to the A bus, depending on the logic level at the direction-control  
(DIR) input. The output-enable (OE) input can be used to disable the device so that the buses are effectively  
isolated.  
These devices are fully specified for hot-insertion applications using I and power-up 3-state. The I circuitry  
off  
off  
disables the outputs, preventing damaging current backflow through the device when it is powered down. The  
power-up 3-state circuitry places the outputs in the high-impedance state during power up and power down,  
which prevents driver conflict.  
Active bus-hold circuitry is provided to hold unused or floating data inputs at a valid logic level. Use of pullup  
or pulldown resistors with the bus-hold circuitry is not recommended.  
When V is between 0 and 1.2 V, the devices are in the high-impedance state during power up or power down.  
CC  
However, to ensure the high-impedance state above 1.2 V, OE should be tied to V  
through a pullup resistor;  
CC  
the minimum value of the resistor is determined by the current-sinking capability of the driver.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Widebus is a trademark of Texas Instruments.  
Copyright 2002, Texas Instruments Incorporated  
UNLESS OTHERWISE NOTED this document contains PRODUCTION  
DATA information current as of publication date. Products conform to  
specifications per the terms of Texas Instruments standard warranty.  
Production processing does not necessarily include testing of all  
parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...15

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74ALVTH16245VRG4 替代型号

型号 品牌 替代类型 描述 数据表
SN74ALVTH16245VR TI

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