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71V67803

更新时间: 2023-12-20 18:45:09
品牌 Logo 应用领域
瑞萨 - RENESAS 静态存储器
页数 文件大小 规格书
23页 297K
描述
3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM

71V67803 数据手册

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71V67603, 71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with  
3.3V I/O, Pipelined Outputs, Single Cycle Deselect  
Commercial and Industrial Temperature Ranges  
PinDefinitions(1)  
Symbol  
Pin Function  
I/O  
Active  
Description  
A
0-A18  
Address Inputs  
I
N/A  
Synchronous Address inputs. The address register is triggered by a combination of the  
rising edge of CLK and ADSC Low or ADSP Low and CE Low.  
Address Status  
I
I
I
LOW  
LOW  
LOW  
Synchronous Address Status from Cache Controller. ADSC is an active LOW input that is  
ADSC  
ADSP  
ADV  
(Cache Controller)  
used to load the address registers with new addresses.  
Address Status  
(Processor)  
Synchronous Address Status from Processor. ADSP is an active LOW input that is used to  
load the address registers with new addresses. ADSP is gated by CE.  
Burst Address  
Advance  
Synchronous Address Advance. ADV is an active LOW input that is used to advance the  
internal burst counter, controlling burst access after the initial address is loaded. When the  
input is HIGH the burst counter is not incremented; that is, there is no address advance.  
Byte Write Enable  
I
LOW  
Synchronous byte write enable gates the byte write inputs BW  
1
-BW . If BWE is LOW at the  
4
BWE  
rising edge of CLK then BWx inputs are passed to the next stage in the circuit. If BWE is  
HIGH then the byte write inputs are blocked and only GW can initiate a write cycle.  
Individual Byte  
Write Enables  
I
I
I
LOW  
LOW  
N/A  
Synchronous byte write enables. BW  
1
controls I/O0-7, I/OP1, BW  
2
controls I/O8-15, I/OP2  
,
BW  
1
-BW  
4
etc. Any active byte write causes all outputs to be disabled.  
Chip Enable  
Synchronous chip enable. CE is used with CS  
CE also gates ADSP.  
0
and CS  
1 to enable the IDT71V67603/7803.  
CE  
CLK  
Clock  
This is the clock input. All timing references for the device are made with respect to this  
input.  
CS  
CS  
GW  
0
Chip Select 0  
Chip Select 1  
I
I
I
HIGH  
LOW  
LOW  
Synchronous active HIGH chip select. CS  
Synchronous active LOW chip select. CS  
0
is used with CE and CS  
1
to enable the chip.  
1
is used with CE and CS  
0 to enable the chip.  
1
Global Write  
Enable  
Synchronous global write enable. This input will write all four 9-bit data bytes when LOW on  
the rising edge of CLK. GW supersedes individual byte write enables.  
I/O  
0
-I/O31  
Data Input/Output  
I/O  
I
N/A  
Synchronous data input/output (I/O) pins. Both the data input path and data output path are  
registered and triggered by the rising edge of CLK.  
I/OP1-I/OP4  
Linear Burst Order  
LOW  
Asynchronous burst order selection input. When LBO is HIGH, the interleaved burst  
sequence is selected. When LBO is LOW the Linear burst sequence is selected. LBO is a  
static input and must not change state while the device is operating.  
LBO  
Output Enable  
I
LOW  
Asynchronous output enable. When OE is LOW the data output drivers are enabled on the  
I/O pins if the chip is also selected. When OE is HIGH the I/O pins are in a high-  
impedance state.  
OE  
V
DD  
DDQ  
SS  
Power Supply  
Power Supply  
Ground  
N/A  
N/A  
N/A  
N/A  
I
N/A  
N/A  
3.3V core power supply.  
V
3.3V I/O Supply.  
V
N/A  
Ground.  
NC  
ZZ  
No Connect  
Sleep Mode  
N/A  
NC pins are not electrically connected to the device.  
HIGH  
Asynchronous sleep mode input. ZZ HIGH will gate the CLK internally and power down the  
IDT71V67603/7803 to its lowest power consumption level. Data retention is guaranteed in  
Sleep Mode.  
5310 tbl 02  
NOTE:  
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.  
6.42  
3
Sep.13.21  

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