5秒后页面跳转
71V67803 PDF预览

71V67803

更新时间: 2023-12-20 18:45:09
品牌 Logo 应用领域
瑞萨 - RENESAS 静态存储器
页数 文件大小 规格书
23页 297K
描述
3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM

71V67803 数据手册

 浏览型号71V67803的Datasheet PDF文件第1页浏览型号71V67803的Datasheet PDF文件第3页浏览型号71V67803的Datasheet PDF文件第4页浏览型号71V67803的Datasheet PDF文件第5页浏览型号71V67803的Datasheet PDF文件第6页浏览型号71V67803的Datasheet PDF文件第7页 
71V67603, 71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with  
3.3V I/O, Pipelined Outputs, Single Cycle Deselect  
Commercial and Industrial Temperature Ranges  
Description  
accesssequence.Thefirstcycleofoutputdatawillbepipelinedforone  
cycle before it is available on the next rising clock edge. If burst mode  
operationisselected(ADV=LOW),thesubsequentthreecyclesofoutput  
datawillbeavailabletotheuseronthenextthreerisingclockedges. The  
orderofthesethreeaddressesaredefinedbytheinternalburstcounter  
and the LBO input pin.  
The IDT71V67603/7803 are high-speed SRAMs organized as  
256K x 36/512K x 18. The IDT71V67603/7803 SRAMs contain write,  
data, address and control registers. Internal logic allows the SRAM to  
generateaself-timedwritebaseduponadecisionwhichcanbeleftuntil  
the end of the write cycle.  
TheIDT71V67603/7803 SRAMsutilizea high-performanceCMOSpro-  
cessandarepackagedinaJEDECstandard14mmx20mm100-pinthinplastic  
quadflatpack(TQFP), a119ballgridarray(BGA) and a 165 fine pitch ball  
grid array (fBGA).  
Theburstmodefeatureoffersthehighestlevelofperformancetothe  
systemdesigner,astheIDT71V67603/7803canprovidefourcyclesof  
dataforasingleaddresspresentedtotheSRAM. Aninternalburstaddress  
counteracceptsthefirstcycleaddressfromtheprocessor,initiatingthe  
PinDescriptionSummary  
A
0-A18  
Address Inputs  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
I/O  
Synchronous  
Synchronous  
Synchronous  
Asynchronous  
Synchronous  
Synchronous  
Synchronous  
N/A  
Chip Enable  
CE  
CS  
0
, CS  
1
Chip Selects  
Output Enable  
OE  
GW  
Global Write Enable  
Byte Write Enable  
Individual Byte Write Selects  
Clock  
BWE  
BW , BW  
(1)  
1
2
, BW  
3
, BW  
4
CLK  
Burst Address Advance  
Address Status (Cache Controller)  
Address Status (Processor)  
Linear / Interleaved Burst Order  
Sleep Mode  
Synchronous  
Synchronous  
Synchronous  
DC  
ADV  
ADSC  
ADSP  
LBO  
ZZ  
Asynchronous  
Synchronous  
N/A  
I/O  
0
-I/O31, I/OP1-I/OP4  
Data Input / Output  
Core Power, I/O Power  
Ground  
V
V
DD, VDDQ  
SS  
Supply  
Supply  
N/A  
5310 tbl 01  
NOTE:  
1. BW3 and BW4 are not applicable for the IDT71V67803.  
6.422  
Sep.13.21  

与71V67803相关器件

型号 品牌 描述 获取价格 数据表
71V67803133BQG IDT Cache SRAM, 512KX18, 4.2ns, CMOS, PBGA165, 13 X 15 MM, ROHS COMPLIANT, FBGA-165

获取价格

71V67803133BQGI IDT Cache SRAM, 512KX18, 4.2ns, CMOS, PBGA165, 13 X 15 MM, ROHS COMPLIANT, FBGA-165

获取价格

71V67803150BGG IDT Cache SRAM, 512KX18, 3.8ns, CMOS, PBGA119, 14 X 22 MM, ROHS COMPLIANT, PLASTIC, MS-028AA,

获取价格

71V67803150BGGI IDT Cache SRAM, 512KX18, 3.8ns, CMOS, PBGA119, 14 X 22 MM, ROHS COMPLIANT, PLASTIC, MS-028AA,

获取价格

71V67803150BQGI IDT Cache SRAM, 512KX18, 3.8ns, CMOS, PBGA165, 13 X 15 MM, ROHS COMPLIANT, FBGA-165

获取价格

71V67803150PFG IDT Cache SRAM, 512KX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, 1 MM PITCH, ROHS CO

获取价格