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71V547S90PFGI8 PDF预览

71V547S90PFGI8

更新时间: 2022-02-26 09:14:35
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器
页数 文件大小 规格书
20页 711K
描述
Synchronous SRAM

71V547S90PFGI8 数据手册

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IDT71V547, 128K x 36, 3.3V Synchronous SRAM with  
ZBTFeature, Burst Counter and Flow-Through Outputs  
Commercial and Industrial Temperature Ranges  
PinDefinitions(1)  
Symbol  
Pin Function  
I/O  
Active  
Description  
Address Inputs  
I
N/A  
A0 - A16  
Synchronous Address inputs. The address register is triggered by a combination  
of the rising edge of CLK, ADV/LD Low, CEN Low and true chip enables.  
Address/Load  
I
N/A  
ADV/LD is a synchronous input that is used to load the internal registers with new  
address and control when it is sampled low at the rising edge of clock with the  
chip selected. When ADV/LD is low with the chip deselected, any burst in  
progress is terminated. When ADV/LD is sampled high then the internal burst  
counter is advanced for any burst that was in progress. The external addresses  
are ignored when ADV/LD is sampled high.  
ADV/LD  
R/W  
Read/Write  
I
I
N/A  
R/W signal is a synchronous input that identifies whether the current load cycle  
initiated is a Read or Write access to the memory array. The data bus activity for  
the current cycle takes place one clock cycle later.  
Clock Enable  
LOW  
Synchronous Clock Enable Input. When CEN is sampled high, all other  
synchronous inputs, including clock are ignored and outputs remain unchanged.  
The effect of CEN sampled high on the device outputs is as if the low to high  
clock transition did not occur. For normal operation, CEN must be sampled low at  
rising edge of clock.  
CEN  
Individual Byte  
Write Enables  
I
I
LOW  
LOW  
Synchronous byte write enables. Enable 9-bit byte has its own active low byte  
BW  
1
- BW  
4
write enable. On load write cycles (When R/W and ADV/LD are sampled low) the  
appropriate byte write signal (BW - BW ) must be valid. The byte write signal  
4
must also be valid on each cycle1of a burst write. Byte Write signals are ignored  
when R/W is sampled high. The appropriate byte(s) of data are written into the  
device one cycle later. BW  
1
- BW can all be tied low if always doing write to the  
4
entire 36-bit word.  
Chip Enables  
Synchronous active low chip enable. CE  
1
and CE  
2
are used with CE to  
2
CE  
1
, CE  
2
enable the IDT71V547. (CE or CE sampled high or CE sampled low) and  
1
ADV/LD low at the rising edge of c2lock, initiates a desele2ct cycle. This device has  
a one cycle deselect, i.e., the data bus will tri-state one clock cycle after deselect  
is initiated.  
CE2  
CLK  
Chip Enable  
Clock  
I
HIGH  
N/A  
Synchronout active high chip enable. CE is used with CE  
1
and CE  
2
to enable  
the chip. CE  
2
has inverted polarity but ot2herwise identical to CE  
1
and CE  
2
.
I
I/O  
I
This is the clock input to the IDT71V547. Except for OE, all timing references for  
the device are made with respect to the rising edge of CLK.  
I/O - I/O  
I/OP01 - I/O3P14  
Data Input/Output  
N/A  
Data input/output (I/O) pins. The data input path is registered, triggered by the  
rising edge of CLK. The data output path is flow-through (no output register).  
Linear Burst  
Order  
LOW  
Burst order selection input. When LBO is high the Interleaved burst sequence is  
selected. When LBO is low the Linear burst sequence is selected. LBO is a static  
DC input.  
LBO  
Output Enable  
I
LOW  
Asynchronous output enable. OE must be low to read data from the 71V547.  
When OE is high the I/O pins are in a high-impedance state. OE does not need  
to be actively controlled for read and write cycles. In normal operation, OE can be  
tied low.  
OE  
V
DD  
SS  
Power Supply  
Ground  
N/A  
N/A  
N/A  
N/A  
3.3V power supply input.  
V
Ground pin.  
3822 tbl 02  
NOTE:  
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.  
3
6.42  

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