Datasheet > 71V416S12BEG8

71V416S12BEG8

更新时间： 2022-12-29 19:55:00

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
9页	645K
描述
3.3V CMOS Static RAM

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数据手册

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71V416S12BEG8 数据手册

IDT71V416S

IDT71V416L

3.3V CMOS Static RAM

4 Meg (256K x 16-Bit)

Features

Description

◆

256K x 16 advanced high-speed CMOS Static RAM

JEDEC Center Power / GND pinout for reduced noise.

Equal access and cycle times

TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganized

as 256K x 16. It is fabricated using high-performance, high-reliability

CMOStechnology.Thisstate-of-the-arttechnology,combinedwithinno-

vativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

speed memory needs.

◆

– CommercialandIndustrial:10/12/15ns

One Chip Select plus one Output Enable pin

Bidirectional data inputs and outputs directly

LVTTL-compatible

◆

TheIDT71V416hasanoutputenablepinwhichoperatesasfastas

5ns,withaddressaccesstimesasfastas10ns.Allbidirectionalinputsand

outputsoftheIDT71V416areLVTTL-compatibleandoperationisfroma

single3.3Vsupply.Fullystaticasynchronouscircuitryisused,requiring

no clocks or refresh for operation.

◆

Low power consumption via chip deselect

Upper and Lower Byte Enable Pins

Single 3.3V power supply

Available in 44-pin, 400 mil plastic SOJ package and a 44-

pin, 400 mil TSOP Type II package and a 48 ball grid array,

9mmx9mmpackage.

The IDT71V416 is packaged in a 44-pin, 400 mil Plastic SOJ and a

44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x

9mmpackage.

◆

Green parts available, see ordering information

FunctionalBlockDiagram

Output

Enable

Buffer

Address

Buffers

Row / Column

Decoders

A0 - A17

High

Byte

I/O 15

I/O 8

Output

Chip

Select

Buffer

High

Byte

Write

Sense

Amps

and

Write

Drivers

4,194,304-bit

Memory

Array

Buffer

Write

Enable

Buffer

Low

Byte

I/O 7

I/O 0

Output

Buffer

Low

Byte

Write

Buffer

BHE

BLE

Byte

Enable

Buffers

3624 drw 01

NOVEMBER 2016

DSC-3624/11

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