Datasheet > 71V2546S150PFGI

71V2546S150PFGI

更新时间： 2024-02-19 15:51:30

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器
页数	文件大小	规格书
21页	733K
描述
3.3V Synchronous ZBT SRAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

71V2546S150PFGI 数据手册

IDT71V2546S/XS

128K x 36

3.3V Synchronous ZBT™ SRAM

2.5V I/O, Burst Counter

Pipelined Outputs

AddressandcontrolsignalsareappliedtotheSRAMduringoneclock

cycle, andtwocycleslatertheassociateddatacycleoccurs, beitread

or write.

Features

◆

128K x 36 memory configurations

◆

Supports high performance system speed - 150 MHz

The IDT71V2546 contains data I/O, address and control signal

registers.Outputenableistheonlyasynchronoussignalandcanbeused

todisabletheoutputsatanygiventime.

(3.8 ns Clock-to-Data Access)

ZBT^TMFeature - No dead cycles between write and read

◆

cycles

◆

AClockEnable(CEN)pinallowsoperationoftheIDT71V2546tobe

suspended as long as necessary. All synchronous inputs are ignored

when(CEN)ishighandtheinternaldeviceregisterswillholdtheirprevious

values.

Internally synchronized output buffer enable eliminates the

need to control OE

◆

Single R/W (READ/WRITE) control pin

◆

Positive clock-edge triggered address, data, and control

Therearethreechipenablepins(CE1,CE2,CE2)thatallowtheuser

to deselect the device when desired. If any one of these three are not

assertedwhenADV/LDislow,nonewmemoryoperationcanbeinitiated.

However,anypendingdatatransfers(readsorwrites)willbecompleted.

Thedatabuswilltri-statetwocyclesafterchipisdeselectedorawriteis

initiated.

signal registers for fully pipelined applications

◆

4-word burst capability (interleaved or linear)

◆

Individual byte write (BW1 - BW4) control (May tie active)

◆

Three chip enables for simple depth expansion

◆

3.3V power supply (±5%), 2.5V I/O Supply (VDDQ)

◆

Packaged in a JEDEC standard 100-pin plastic thin quad

TheIDT71V2546hasanon-chipburstcounter.Intheburstmode,the

IDT71V2546 can provide four cycles of data for a single address

presentedtotheSRAM.Theorderoftheburstsequenceisdefinedbythe

LBOinputpin.TheLBOpinselectsbetweenlinearandinterleavedburst

sequence. The ADV/LD signal is used to load a new external address

(ADV/LD = LOW) or increment the internal burst counter (ADV/LD =

HIGH).

flatpack (TQFP) and 119 ball grid array (BGA)

Description

The IDT71V2546 is a 3.3V high-speed 4,718,592-bit (4.5 Megabit)

synchronous SRAM. It is designed to eliminate dead bus cycles when

turning the bus around between reads and writes, or writes and reads.

Thus, theyhavebeengiventhenameZBT^TM, orZeroBusTurnaround.

TheIDT71V2546SRAMutilizeIDT's latesthigh-performanceCMOS

process and is packaged in a JEDEC standard 14mm x 20mm 100-pin

thinplasticquadflatpack(TQFP)aswellasa119ballgridarray(BGA).

PinDescriptionSummary

A0-A16

Address Inputs

Input

I/O

Synchronous

Asynchronous

Synchronous

N/A

Chip Enables

CE , CE

, CE

Output Enable

R/W

Read/Write Signal

Clock Enable

CEN

Individual Byte Write Selects

Clock

, BW

CLK

ADV/LD

LBO

Advance burst address / Load new address

Linear / Interleaved Burst Order

Sleep Mode

Synchronous

Static

Synchronous

Static

I/O

-I/O31, I/OP1-I/OP4

DD, VDDQ

Data Input / Output

Core Power, I/O Power

Ground

Supply

Static

5294 tbl 01

APRIL 2011

DSC-5294/07

12 3 4 5 6 7...21

中文翻译

下载PDF

与71V2546S150PFGI相关器件

型号	品牌	获取价格	描述	数据表
71V2546S150PFGI8	IDT	获取价格	ZBT SRAM, 128KX36, 3.8ns, CMOS, PQFP100, 14 X 20 MM, GREEN, PLASTIC, TQFP-100
71V2546S150PFI	IDT	获取价格	ZBT SRAM, 128KX36, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
71V2546S150PFI8	IDT	获取价格	ZBT SRAM, 128KX36, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
71V2546SA100BG	IDT	获取价格	ZBT SRAM, 128KX36, 5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028AA, BGA-119
71V2546SA100BG8	IDT	获取价格	ZBT SRAM, 128KX36, 5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028AA, BGA-119
71V2546SA100BGG	IDT	获取价格	SRAM
71V2546SA100BGGI	IDT	获取价格	ZBT SRAM, 128KX36, 5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028AA, BGA-119
71V2546SA100BGI	IDT	获取价格	ZBT SRAM, 128KX36, 5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028AA, BGA-119
71V2546SA100BGI8	IDT	获取价格	ZBT SRAM, 128KX36, 5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028AA, BGA-119
71V2546SA100BQGI	IDT	获取价格	SRAM

与71V2546S150PFGI相关文章

L6234手册解读：引脚信息、电气参数
2024-07-01

1
解读BSP135H6327资料：电气参数及替换型号推荐
2024-07-01

1
FDG6302P资料解析：电气参数、产品特性
2024-07-01

3
SBAV99WT1G资料手册：参数信息、产品特性、替代型号推荐
2024-07-01

1

产品中心

服务支持

精选活动

关于我们

帮助中心

71V2546S150PFGI

71V2546S150PFGI 数据手册

与71V2546S150PFGI相关器件

与71V2546S150PFGI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

71V2546S150PFGI

71V2546S150PFGI 数据手册

与71V2546S150PFGI相关器件

与71V2546S150PFGI相关文章

您还可以找

您在本页遇到什么问题？