Datasheet > 71V016SA12BFG28

71V016SA12BFG28

更新时间： 2023-03-15 00:00:00

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器
页数	文件大小	规格书
9页	135K
描述
Standard SRAM, 64KX16, 12ns, CMOS, PBGA48

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

71V016SA12BFG28 数据手册

IDT71V016SA, 3.3V CMOS Static RAM

for Automotive Applications 1 Meg (64K x 16-Bit)

Commercial and Industrial Temperature Ranges

Absolute Maximum Ratings⁽¹⁾

Recommended Operating

Temperature and Supply Voltage

Symbol

Rating

Value

Unit

V^DD

Supply Voltage Relative to

V^SS

–0.5 to +4.6

Grade

Temperature

-40°C to +125°C

-40°C to +105°C

-40°C to +85°C

0°C to +70°C

V^SS

V^DD

Automotive Grade 1

Automotive Grade 2

Automotive Grade 3

Automotive Grade 4

See Below

Terminal Voltage Relative

to V^SS

–0.5 to V^DD+0.5

V^IN, V^OUT

T^BIAS

T^J

Temperature Under Bias

Junction Temperature Page

Storage Temperature

Power Dissipation

–55 to +125

–40 to +150

–65 to +150

1.25

^oC

See Below

6818 tbl 04

T^STG

P^T

Recommended DC Operating

Conditions

I^OUT

NOTE:

DC Output Current

Symbol

V^DD

Vss

Parameter

Min.

Typ.

Max.

Unit

6818 tbl 03

1. StressesgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause

permanentdamagetothedevice.Thisisastressratingonlyandfunctionaloperation

ofthedeviceattheseoranyotherconditionsabovethoseindicatedintheoperational

sections of this specification is not implied. Exposure to absolute maximum rating

conditionsforextendedperiodsmayaffectreliability.

Supply Voltage

3.0

3.3

3.6

Ground

____

V^IH

Input High Voltage

Input Low Voltage

2.0

V^DD+0.3⁽¹⁾

0.8

–0.3⁽¹⁾

____

V^IL

Capacitance

6818 tbl 05

NOTE:

(TA = +25°C, f = 1.0MHz, SOJ/TSOP package)

1. Refer to maximum overshoot/undershoot diagram below. The measured

voltage at device pin should not exceed half sinusoidal wave with 2V peak and

half period of 2ns.

Symbol

C^IN

Parameter⁽¹⁾

Input Capacitance

I/O Capacitance

Conditions

V^IN= 3dV

V^OUT= 3dV

Max. Unit

C^I/O

MaximumOvershoot/Undershoot

6818 tbl 06

NOTE:

+2V

1. Thisparameterisguaranteedbydevicecharacterization,butnotproductiontested.

2ns

2 ns

-2V

6818 drw 12

DC Electrical Characteristics

(VDD = Min. to Max., Automotive Temperature Ranges)

Automotive

Temperature

Grade

IDT71V016SA

Symbol

Parameter

Input Leakage Current

Test Conditions

Min.

Max.

Unit

___

1 and 2

3 and 4

1 and 2

3 and 4

|ILI|

VDD = Max., VIN = VSS to VDD

µA

|ILO|

Output Leakage Current

VDD = Max., CS = VIH, VOUT = VSS to VDD

µA

VOL

VOH

Output Low Voltage

Output High Voltage

IOL = 8mA, VDD = Min.

IOH = -4mA, VDD = Min.

0.4

___

2.4

6818 tbl 07

6.42

1 234 5 6 7...9

下载PDF

与71V016SA12BFG28相关器件

型号	品牌	描述	获取价格	数据表
71V016SA12BFG38	IDT	Standard SRAM, 64KX16, 12ns, CMOS, PBGA48	获取价格
71V016SA12BFG8	IDT	3.3V CMOS Static RAM	获取价格
71V016SA12BFGI	IDT	3.3V CMOS Static RAM	获取价格
71V016SA12BFGI8	IDT	3.3V CMOS Static RAM	获取价格
71V016SA12PHG	IDT	3.3V CMOS Static RAM	获取价格
71V016SA12PHG28	IDT	Standard SRAM, 64KX16, 12ns, CMOS, PDSO44	获取价格