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71V016SA12YG PDF预览

71V016SA12YG

更新时间: 2024-11-08 00:32:51
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 116K
描述
3.3V CMOS Static RAM

71V016SA12YG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOJ
包装说明:SOJ, SOJ44,.44针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:1.61
最长访问时间:12 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-J44JESD-609代码:e3
长度:28.575 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
湿度敏感等级:3功能数量:1
端子数量:44字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ44,.44封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:3.3 V
认证状态:Not Qualified座面最大高度:3.683 mm
最大待机电流:0.01 A最小待机电流:3 V
子类别:SRAMs最大压摆率:0.16 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Matte Tin (Sn) - annealed端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

71V016SA12YG 数据手册

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IDT71V016SA  
3.3V CMOS Static RAM  
1 Meg (64K x 16-Bit)  
Features  
Description  
64K x 16 advanced high-speed CMOS Static RAM  
TheIDT71V016isa1,048,576-bithigh-speedStaticRAMorganized  
as64Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOS  
technology.Thisstate-of-the-arttechnology,combinedwithinnovative  
circuitdesigntechniques,providesacost-effectivesolutionforhigh-speed  
memoryneeds.  
Equal access and cycle times  
— Commercial:10/12/15/20ns  
— Industrial:10/12/15/20ns  
One Chip Select plus one Output Enable pin  
Bidirectional data inputs and outputs directly  
TheIDT71V016hasanoutputenablepinwhichoperatesasfastas  
5ns,withaddressaccesstimesasfastas10ns.Allbidirectionalinputsand  
outputsoftheIDT71V016areLVTTLcompatibleandoperationisfroma  
single3.3Vsupply.Fullystaticasynchronouscircuitryisused,requiring  
no clocks or refresh for operation.  
LVTTL-compatible  
Low power consumption via chip deselect  
Upper and Lower Byte Enable Pins  
Single 3.3V power supply  
Available in 44-pin Plastic SOJ, 44-pin TSOP, and  
TheIDT71V016ispackagedinaJEDECstandard44-pinPlasticSOJ,  
a 44-pin TSOP Type II, and a 48-ball plastic 7 x 7 mm FBGA.  
48-Ball Plastic FBGA packages  
Functional Block Diagram  
Output  
Enable  
Buffer  
OE  
Address  
Buffers  
Row / Column  
Decoders  
A0 – A15  
I/O15  
High  
8
8
Chip  
Enable  
Buffer  
Byte  
CS  
I/O  
Buffer  
I/O8  
Sense  
Amps  
and  
Write  
Drivers  
16  
64K x 16  
Memory  
Array  
Write  
Enable  
Buffer  
WE  
I/O7  
I/O0  
Low  
Byte  
I/O  
8
8
Buffer  
BHE  
BLE  
Byte  
Enable  
Buffers  
3834 drw 01  
AUGUST 2013  
1
2013 Integrated Device Technology, Inc. All rights reserved. Product specifications subject to change without notice.  
DSC-3834/13  
©

71V016SA12YG 替代型号

型号 品牌 替代类型 描述 数据表
71V016SA12YG8 IDT

完全替代

3.3V CMOS Static RAM
CY7C1021DV33-10VXIT CYPRESS

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Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, SOJ-44
CY7C1021DV33-10VXI CYPRESS

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1-Mbit (64K x 16) Static RAM

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