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71124S12YI PDF预览

71124S12YI

更新时间: 2024-11-22 07:22:43
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器光电二极管
页数 文件大小 规格书
8页 1119K
描述
Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

71124S12YI 数据手册

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IDT71124  
CMOS Static RAM  
1 Meg (128K x 8-Bit)  
Revolutionary Pinout  
Description  
Features  
The IDT71124 is a 1,048,576-bit high-speed static RAM orga-  
nized as 128K x 8. It is fabricated using IDTs high-performance,  
high-reliability CMOS technology. This state-of-the-art technology,  
combined with innovative circuit design techniques, provides a cost-  
effective solution for high-speed memory needs. The JEDEC  
centerpower/GND pinout reduces noise generation and improves  
system performance.  
128K x 8 advanced high-speed CMOS static RAM  
JEDEC revolutionary pinout (center power/GND) for  
reduced noise.  
Equal access and cycle times  
– Commercial and Industrial: 12/15/20ns  
One Chip Select plus one Output Enable pin  
Bidirectional inputs and outputs directly TTL-compatible  
Low power consumption via chip deselect  
The IDT71124 has an output enable pin which operates as fast  
as 6ns, with address access times as fast as 12ns available. All  
bidirectional inputs and outputs of the IDT71124 are TTL-compatible  
and operation is from a single 5V supply. Fully static asynchronous  
circuitry is used; no clocks or refreshes are required for operation.  
The IDT71124 is packaged in a 32-pin 400 mil Plastic SOJ.  
Available in a 32-pin 400 mil Plastic SOJ.  
Functional Block Diagram  
A0  
1,048,576-BIT  
MEMORY ARRAY  
ADDRESS  
DECODER  
A16  
8
8
I/O0 - I/O7  
I/O CONTROL  
,
8
WE  
OE  
CS  
CONTROL  
LOGIC  
3514 drw 01  
2008  
OCTOBER  
1
©2000IntegratedDeviceTechnology,Inc.  
DSC-3514/10  

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