Datasheet > 70V7599S200BFG

70V7599S200BFG

更新时间： 2022-12-29 21:43:09

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
22页	755K
描述
HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM

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70V7599S200BFG 数据手册

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM

Industrial and Commercial Temperature Ranges

RecommendedOperating

RecommendedDCOperating

TemperatureandSupplyVoltage⁽¹⁾

Conditions with VDDQ at 2.5V

Symbol

V^DD

Parameter

Core Supply Voltage

I/O Supply Voltage⁽³⁾

Ground

Min. Typ.

Max.

Unit

Ambient

Grade

Commercial

Temperature

0^OC to +70^OC

-40^OC to +85^OC

GND

3.15

2.4

3.3

2.5

3.45

3.3V

150mV

V^DDQ

V^SS

2.6

Industrial

VDDQ + 100mV⁽²⁾

5626 tbl 04

____

Input High Voltage

1.7

V^IH

NOTE:

(Address & Control Inputs)

1. This is the parameter TA. This is the "instant on" case temperature.

____

V^IH

V^IL

Input High Voltage - I/O⁽³⁾

1.7

-0.3⁽¹⁾

VDDQ + 100mV⁽²⁾

0.7

Input Low Voltage

5626 tbl 05a

NOTES:

1. Undershoot of VIL > -1.5V for pulse width less than 10ns is allowed.

2. VTERM must not exceed VDDQ + 100mV.

AbsoluteMaximumRatings⁽¹⁾

3. To select operation at 2.5V levels on the I/Os and controls of a given port, the

OPTpinforthatportmustbesettoVIL (0V), andVDDQX forthatportmustbesupplied

as indicated above.

Symbol

Rating

Commercial

& Industrial

Unit

(2)

TERM

Terminal Voltage

with Respect to

GND

-0.5 to +4.6

RecommendedDCOperating

Conditions with VDDQ at 3.3V

BIAS

Temperature

Under Bias

-55 to +125

-65 to +150

^oC

Symbol

Parameter

Core Supply Voltage

I/O Supply Voltage⁽³⁾

Ground

Min. Typ.

Max.

Unit

Storage

TSTG

DDQ

3.15

3.3

3.45

Temperature

3.45

IOUT

DC Output Current

5626 tbl 06

NOTES:

Input High Voltage

2.0

DDQ + 150mV⁽²⁾

____

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated

in the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliability.

2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time or

4ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 150mV.

(Address & Control Inputs)⁽³⁾

Input High Voltage - I/O⁽³⁾

2.0

-0.3⁽¹⁾

DDQ + 150mV⁽²⁾

0.8

____

Input Low Voltage

5626 tbl 05b

NOTES:

1. Undershoot of VIL > -1.5V for pulse width less than 10ns is allowed.

2. VTERM must not exceed VDDQ + 150mV.

3. To select operation at 3.3V levels on the I/Os and controls of a given port, the

OPT pin for that port must be set to VIH (3.3V), and VDDQX for that port must be

supplied as indicated above.

6.42

1...4 5 678 9 10...22

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与70V7599S200BFG相关器件

型号	品牌	描述	获取价格	数据表
70V7599S200BFG8	IDT	HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM	获取价格
70V7599S200BFGI	IDT	HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM	获取价格
70V7599S200BFGI8	IDT	HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM	获取价格
70V7599S200BFI	IDT	HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.	获取价格
70V7599S200DR	IDT	HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.	获取价格
70V7599S200DRG	IDT	HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM	获取价格

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