Datasheet > 70V7319

70V7319

更新时间： 2023-12-20 18:44:14

品牌	Logo	应用领域
瑞萨 - RENESAS		静态存储器
页数	文件大小	规格书
23页	539K
描述
256K x 18 Synchronous Bank-Switchable Dual-Port SRAM

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70V7319 数据手册

70V7319S

High-Speed 256K x 18 Synchronous Bank-Switchable Dual-Port Static RAM

Industrial and Commercial Temperature Ranges

2.5V

AC Test Conditions (VDDQ - 3.3V/2.5V)

Input Pulse Levels (Address & Controls)

Input Pulse Levels (I/Os)

Input Rise/Fall Times

GND to 3.0V/GND to 2.4V

2ns

833Ω

Input Timing Reference Levels

Output Reference Levels

Output Load

1.5V/1.25V

DATAOUT

1.5V/1.25V

5pF*

770Ω

Figures 1 and 2

5629 tbl 10

3.3V

590Ω

5pF*

50Ω

DATAOUT

1.5V/1.25

10pF

(Tester)

435Ω

5629 drw 03

Figure1. ACOutputTestload.

5629 drw 04

Figure2.OutputTestLoad

(For tCKLZ, tCKHZ, tOLZ, and tOHZ).

*Includingscopeandjig.

10.5pF is the I/O capacitance of this

device, and 10pF is the AC Test Load

Capacitance.

ΔtCD

(Typical, ns)

•

20.5

80 100

200

-1

Capacitance (pF)

5629 drw 05

Figure3.TypicalOutputDerating(LumpedCapacitiveLoad).

6.42

1...6 7 8910 11 12...23

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