Datasheet > 70V7319

70V7319

更新时间： 2023-12-20 18:44:14

品牌	Logo	应用领域
瑞萨 - RENESAS		静态存储器
页数	文件大小	规格书
23页	539K
描述
256K x 18 Synchronous Bank-Switchable Dual-Port SRAM

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70V7319 数据手册

70V7319S

High-Speed 256K x 18 Synchronous Bank-Switchable Dual-Port Static RAM

Industrial and Commercial Temperature Ranges

RecommendedOperating

RecommendedDCOperating

TemperatureandSupplyVoltage⁽¹⁾

Conditions with VDDQ at 2.5V

Symbol

Parameter

Core Supply Voltage

I/O Supply Voltage⁽³⁾

Ground

Min. Typ.

Max.

Unit

Ambient

Grade

Commercial

Temperature

0^OC to +70^OC

-40^OC to +85^OC

GND

V^DD

3.15

2.4

3.3

2.5

3.45

3.3V

150mV

V^DDQ

V^SS

2.6

Industrial

5629 tbl 04

VDDQ + 100mV⁽²⁾

____

Input High Voltage

(Address & Control Inputs)

1.7

V^IH

NOTE:

1. ThisistheparameterTA.Thisisthe"instanton"casetemperature.

Input High Voltage - I/O⁽³⁾

Input Low Voltage

1.7

VDDQ + 100mV⁽²⁾

0.7

____

V^IH

V^IL

-0.3⁽¹⁾

5629 tbl 05a

NOTES:

1. UndershootofVIL>-1.5Vforpulsewidthlessthan10nsisallowed.

2. VTERM mustnotexceedVDDQ+100mV.

3. Toselectoperationat2.5VlevelsontheI/Osandcontrolsofagivenport,theOPTpinfor

thatportmustbesettoVIL (0V),andVDDQXforthatportmustbesuppliedasindicatedabove.

AbsoluteMaximumRatings⁽¹⁾

Symbol

Rating

Commercial

& Industrial

Unit

(2)

TERM

Terminal Voltage

with Respect to

GND

-0.5 to +4.6

RecommendedDCOperating

Conditions with VDDQ at 3.3V

BIAS

Temperature

Under Bias

-55 to +125

-65 to +150

^oC

Symbol

Parameter

Core Supply Voltage

I/O Supply Voltage⁽³⁾

Ground

Min. Typ.

Max.

Unit

Storage

Temperature

TSTG

DDQ

3.15

3.3

3.45

IOUT

DC Output Current

5629 tbl 06

NOTES:

Input High Voltage

2.0

DDQ + 150mV⁽²⁾

____

1. StressesgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause

permanentdamagetothedevice.Thisisastressratingonlyandfunctionaloperationofthe

deviceattheseoranyotherconditionsabovethoseindicatedintheoperationalsectionsof

thisspecificationisnotimplied.Exposuretoabsolutemaximumratingconditionsforextended

periodsmayaffectreliability.

(Address & Control Inputs)⁽³⁾

Input High Voltage - I/O⁽³⁾

Input Low Voltage

2.0

DDQ + 150mV⁽²⁾

0.8

____

-0.3⁽¹⁾

2. VTERMmustnotexceedVDD+150mVformorethan25%ofthecycletimeor4nsmaximum,

andislimitedto<20mAfortheperiodofVTERM >VDD +150mV.

5629 tbl 05b

NOTES:

1. UndershootofVIL>-1.5Vforpulsewidthlessthan10nsisallowed.

2. VTERM mustnotexceedVDDQ+150mV.

3. Toselectoperationat3.3VlevelsontheI/Osandcontrolsofagivenport,theOPTpinfor

thatportmustbesettoVIH(3.3V),andVDDQXforthatportmustbesuppliedasindicatedabove.

6.42

1...3 4 567 8 9...23

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