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70V261L25PFGI8 PDF预览

70V261L25PFGI8

更新时间: 2024-12-02 00:45:11
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
17页 338K
描述
HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

70V261L25PFGI8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TQFP
包装说明:LFQFP, QFP100,.63SQ,20针数:100
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.28
Samacsys Description:TQFP 14.0 X 14.0 X 1.4 MM最长访问时间:25 ns
I/O 类型:COMMONJESD-30 代码:S-PQFP-G100
JESD-609代码:e3长度:14 mm
内存密度:262144 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:16湿度敏感等级:3
功能数量:1端口数量:2
端子数量:100字数:16384 words
字数代码:16000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:16KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LFQFP
封装等效代码:QFP100,.63SQ,20封装形状:SQUARE
封装形式:FLATPACK, LOW PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:3.3 V
认证状态:Not Qualified座面最大高度:1.6 mm
最大待机电流:0.003 A最小待机电流:3 V
子类别:SRAMs最大压摆率:0.185 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30宽度:14 mm

70V261L25PFGI8 数据手册

 浏览型号70V261L25PFGI8的Datasheet PDF文件第2页浏览型号70V261L25PFGI8的Datasheet PDF文件第3页浏览型号70V261L25PFGI8的Datasheet PDF文件第4页浏览型号70V261L25PFGI8的Datasheet PDF文件第5页浏览型号70V261L25PFGI8的Datasheet PDF文件第6页浏览型号70V261L25PFGI8的Datasheet PDF文件第7页 
HIGH-SPEED 3.3V  
16K x 16 DUAL-PORT  
STATIC RAM  
IDT70V261S/L  
Š
Features  
IDT70V261 easily expands data bus width to 32 bits or more  
using the Master/Slave select when cascading more than  
one device  
M/S = VIH for BUSY output flag on Master  
M/S = VIL for BUSY input on Slave  
Interrupt Flag  
On-chip port arbitration logic  
Full on-chip hardware support of semaphore signaling  
between ports  
Fully asynchronous operation from either port  
TTL-compatible, single 3.3V (±0.3V) power supply  
Available in a 100-pin TQFP, Thin Quad Plastic Flatpack  
Industrial temperature range (-40°C to +85°C) is available  
for selected speed  
True Dual-Ported memory cells which allow simultaneous  
access of the same memory location  
High-speed access  
– Commercial:25/35/55ns(max.)  
– Industrial: 25ns (max.)  
Low-power operation  
– IDT70V261S  
Active: 300mW (typ.)  
Standby: 3.3mW (typ.)  
– IDT70V261L  
Active: 300mW (typ.)  
Standby: 660µW (typ.)  
Separate upper-byte and lower-byte control for multiplexed  
bus compatibility  
Green parts available, see ordering information  
Functional Block Diagram  
R/W  
UB  
L
R/W  
R
R
UB  
L
LB  
CE  
OE  
L
LB  
CE  
OE  
R
L
L
R
R
I/O8L-I/O15L  
I/O0L-I/O7L  
I/O8R-I/O15R  
I/O  
Control  
I/O  
Control  
I/O0R-I/O7R  
(1,2)  
(1,2)  
L
BUSY  
R
BUSY  
A
13R  
0R  
A
13L  
Address  
Decoder  
MEMORY  
ARRAY  
Address  
Decoder  
A
0L  
A
14  
14  
ARBITRATION  
INTERRUPT  
SEMAPHORE  
LOGIC  
CE  
OE  
R/W  
R
CE  
OE  
R/W  
L
L
R
L
R
SEM  
INTR  
R
SEM  
L
(2)  
(2)  
M/S  
INTL  
3040 drw 01  
NOTES:  
1. (MASTER): BUSY is output; (SLAVE): BUSY is input.  
2. BUSY and INT outputs are non-tri-stated push-pull.  
SEPTEMBER 2012  
1
DSC-3040/11  
©2012IntegratedDeviceTechnology,Inc.  

70V261L25PFGI8 替代型号

型号 品牌 替代类型 描述 数据表
70V261L25PFGI IDT

完全替代

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

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