5秒后页面跳转
70V24L25JG8 PDF预览

70V24L25JG8

更新时间: 2024-11-27 14:40:07
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
22页 181K
描述
Dual-Port SRAM, 4KX16, 25ns, CMOS, PQCC84, PLASTIC, LCC-84

70V24L25JG8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:LCC
包装说明:QCCJ,针数:84
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.53
最长访问时间:25 ns其他特性:INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN
JESD-30 代码:S-PQCC-J84JESD-609代码:e3
长度:29.3116 mm内存密度:65536 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:16
功能数量:1端子数量:84
字数:4096 words字数代码:4000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4KX16
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装形状:SQUARE封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:4.57 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:MATTE TIN端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30宽度:29.3116 mm
Base Number Matches:1

70V24L25JG8 数据手册

 浏览型号70V24L25JG8的Datasheet PDF文件第2页浏览型号70V24L25JG8的Datasheet PDF文件第3页浏览型号70V24L25JG8的Datasheet PDF文件第4页浏览型号70V24L25JG8的Datasheet PDF文件第5页浏览型号70V24L25JG8的Datasheet PDF文件第6页浏览型号70V24L25JG8的Datasheet PDF文件第7页 
HIGH-SPEED 3.3V  
4K x 16 DUAL-PORT  
STATIC RAM  
IDT70V24S/L  
IDT70V24 easily expands data bus width to 32 bits or more  
using the Master/Slave select when cascading more than  
one device  
M/S = VIH for BUSY output flag on Master  
M/S = VIL for BUSY input on Slave  
BUSY and Interrupt Flag  
On-chip port arbitration logic  
Full on-chip hardware support of semaphore signaling  
between ports  
Fully asynchronous operation from either port  
LVTTL-compatible, single 3.3V (±0.3V) power supply  
Available in 84-pin PGA, 84-pin PLCC and 100-pin TQFP  
Industrial temperature range (-40°C to +85°C) is available  
for selected speeds  
Features  
True Dual-Ported memory cells which allow simultaneous  
reads of the same memory location  
High-speed access  
– Commercial:15/20/25/35/55ns(max.)  
Industrial:20/25/35/55ns(max.)  
Low-power operation  
IDT70V24S  
Active:400mW(typ.)  
Standby: 3.3mW (typ.)  
IDT70V24L  
Active:380mW(typ.)  
Standby: 660µW (typ.)  
Separate upper-byte and lower-byte control for multiplexed  
bus compatibility  
Functional Block Diagram  
R/WR  
UBR  
R/WL  
UBL  
LBR  
CER  
OER  
LBL  
CEL  
OEL  
I/O8L-I/O15L  
I/O8R-I/O15R  
I/O  
Control  
I/O  
Control  
I/O0R-I/O7R  
I/O0L-I/O7L  
BUSY(1,2)  
(1,2)  
BUSYR  
L
A11L  
A11R  
Address  
Decoder  
MEMORY  
ARRAY  
Address  
Decoder  
A0L  
A0R  
12  
12  
ARBITRATION  
INTERRUPT  
SEMAPHORE  
LOGIC  
CEL  
OEL  
CER  
OER  
R/WR  
WL  
R/  
SEMR  
INTR  
SEML  
INTL  
(2)  
(2)  
M/S  
2911 drw 01  
NOTES:  
1. (MASTER): BUSY is output; (SLAVE): BUSY is input.  
2. BUSY outputs and INT outputs are non-tri-stated push-pull.  
MARCH 2000  
1
DSC-2911/8  
©2000IntegratedDeviceTechnology,Inc.  

与70V24L25JG8相关器件

型号 品牌 获取价格 描述 数据表
70V24L25JI IDT

获取价格

Dual-Port SRAM, 4KX16, 25ns, CMOS, PQCC84, 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC,
70V24L25JI8 IDT

获取价格

Multi-Port SRAM, 4KX16, 25ns, CMOS, CQCC84
70V24L25PFG IDT

获取价格

Dual-Port SRAM, 4KX16, 25ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQ
70V24L25PFG8 IDT

获取价格

Dual-Port SRAM, 4KX16, 25ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQ
70V24L25PFGI IDT

获取价格

Dual-Port SRAM, 4KX16, 25ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQ
70V24L35GG IDT

获取价格

Dual-Port SRAM, 4KX16, 35ns, CMOS, CPGA84, 1.120 X 1.120 INCH, 0.160 INCH HEIGHT, GREEN, C
70V24L35J8 IDT

获取价格

PLCC-84, Reel
70V24L35PF9 IDT

获取价格

Dual-Port SRAM, 4KX16, 35ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
70V24L55G IDT

获取价格

PGA-84, Tray
70V24L55GG IDT

获取价格

Dual-Port SRAM, 4KX16, 55ns, CMOS, CPGA84, 1.120 X 1.120 INCH, 0.160 INCH HEIGHT, GREEN, C