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70V24L55GGI PDF预览

70V24L55GGI

更新时间: 2024-11-27 14:40:07
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
22页 181K
描述
Dual-Port SRAM, 4KX16, 55ns, CMOS, CPGA84, CERAMIC, PGA-84

70V24L55GGI 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:PGA
包装说明:CERAMIC, PGA-84针数:84
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.66
Is Samacsys:N最长访问时间:55 ns
其他特性:INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWNJESD-30 代码:S-CPGA-P84
JESD-609代码:e3长度:27.94 mm
内存密度:65536 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:16功能数量:1
端子数量:84字数:4096 words
字数代码:4000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4KX16封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:PGA封装形状:SQUARE
封装形式:GRID ARRAY并行/串行:PARALLEL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:5.207 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:PIN/PEG端子节距:2.54 mm
端子位置:PERPENDICULAR处于峰值回流温度下的最长时间:30
宽度:27.94 mmBase Number Matches:1

70V24L55GGI 数据手册

 浏览型号70V24L55GGI的Datasheet PDF文件第2页浏览型号70V24L55GGI的Datasheet PDF文件第3页浏览型号70V24L55GGI的Datasheet PDF文件第4页浏览型号70V24L55GGI的Datasheet PDF文件第5页浏览型号70V24L55GGI的Datasheet PDF文件第6页浏览型号70V24L55GGI的Datasheet PDF文件第7页 
HIGH-SPEED 3.3V  
4K x 16 DUAL-PORT  
STATIC RAM  
IDT70V24S/L  
IDT70V24 easily expands data bus width to 32 bits or more  
using the Master/Slave select when cascading more than  
one device  
M/S = VIH for BUSY output flag on Master  
M/S = VIL for BUSY input on Slave  
BUSY and Interrupt Flag  
On-chip port arbitration logic  
Full on-chip hardware support of semaphore signaling  
between ports  
Fully asynchronous operation from either port  
LVTTL-compatible, single 3.3V (±0.3V) power supply  
Available in 84-pin PGA, 84-pin PLCC and 100-pin TQFP  
Industrial temperature range (-40°C to +85°C) is available  
for selected speeds  
Features  
True Dual-Ported memory cells which allow simultaneous  
reads of the same memory location  
High-speed access  
– Commercial:15/20/25/35/55ns(max.)  
Industrial:20/25/35/55ns(max.)  
Low-power operation  
IDT70V24S  
Active:400mW(typ.)  
Standby: 3.3mW (typ.)  
IDT70V24L  
Active:380mW(typ.)  
Standby: 660µW (typ.)  
Separate upper-byte and lower-byte control for multiplexed  
bus compatibility  
Functional Block Diagram  
R/WR  
UBR  
R/WL  
UBL  
LBR  
CER  
OER  
LBL  
CEL  
OEL  
I/O8L-I/O15L  
I/O8R-I/O15R  
I/O  
Control  
I/O  
Control  
I/O0R-I/O7R  
I/O0L-I/O7L  
BUSY(1,2)  
(1,2)  
BUSYR  
L
A11L  
A11R  
Address  
Decoder  
MEMORY  
ARRAY  
Address  
Decoder  
A0L  
A0R  
12  
12  
ARBITRATION  
INTERRUPT  
SEMAPHORE  
LOGIC  
CEL  
OEL  
CER  
OER  
R/WR  
WL  
R/  
SEMR  
INTR  
SEML  
INTL  
(2)  
(2)  
M/S  
2911 drw 01  
NOTES:  
1. (MASTER): BUSY is output; (SLAVE): BUSY is input.  
2. BUSY outputs and INT outputs are non-tri-stated push-pull.  
MARCH 2000  
1
DSC-2911/8  
©2000IntegratedDeviceTechnology,Inc.  

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