Datasheet > 70T633S10BFG

70T633S10BFG

更新时间： 2022-12-29 21:22:09

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
27页	437K
描述
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM

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70T633S10BFG 数据手册

IDT70T633/1S

High-Speed 2.5V 512/256K x 18 Asynchronous Dual-Port Static RAM

Industrial and Commercial Temperature Ranges

Truth Table I—Read/Write and Enable Control⁽¹⁾

Upper Byte Lower Byte

R/W

I/O^9-17

High-Z

I/O0-8

High-Z

MODE

Deselected–Power Down

SEM

Deselected–Power Down

Both Bytes Deselected

Write to Lower Byte

Write to Upper Byte

Write to Both Bytes

Read Lower Byte

DIN

High-Z

DIN

High-Z

DOUT

OUT

High-Z

Read Upper Byte

DOUT

Read Both Bytes

High-Z

Outputs Disabled

High-Z Sleep Mode

5670 tbl 02

NOTE:

1. "H" = VIH, "L" = VIL, "X" = Don't Care.

Truth Table II – Semaphore Read/Write Control⁽¹⁾

Inputs⁽¹⁾

Outputs

CE⁽²⁾

SEM

R/W

I/O1-17

I/O

Mode

DATAOUT

DATAOUT Read Data in Semaphore Flag⁽³⁾

↑

DATAIN

Write I/O

0 into Semaphore Flag

______

Not Allowed

5670 tbl 03

NOTES:

1. There are eight semaphore flags written to I/O0 and read from all the I/Os (I/O0-I/O17). These eight semaphore flags are addressed by A0-A2.

2. CE = L occurs when CE⁰= VIL and CE1 = VIH. CE = H when CE0 = VIH and/or CE1 = VIL.

3. Each byte is controlled by the respective UB and LB. To read data UB and/or LB = VIL.

1...3 4 567 8 9...27

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