是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | QCCJ, LDCC52,.8SQ | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.41 |
风险等级: | 5.28 | 最长访问时间: | 55 ns |
I/O 类型: | COMMON | JESD-30 代码: | S-PQCC-J52 |
JESD-609代码: | e3 | 内存密度: | 18432 bit |
内存集成电路类型: | DUAL-PORT SRAM | 内存宽度: | 9 |
湿度敏感等级: | 1 | 功能数量: | 1 |
端口数量: | 2 | 端子数量: | 52 |
字数: | 2048 words | 字数代码: | 2000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 2KX9 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | QCCJ | 封装等效代码: | LDCC52,.8SQ |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 5 V | 认证状态: | Not Qualified |
最大待机电流: | 0.005 A | 最小待机电流: | 2 V |
子类别: | SRAMs | 最大压摆率: | 0.2 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Matte Tin (Sn) - annealed | 端子形式: | J BEND |
端子节距: | 1.27 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
70121L55JGI | IDT |
获取价格 |
HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT | |
70121L55JGI8 | IDT |
获取价格 |
Dual-Port SRAM | |
70121S20J | IDT |
获取价格 |
Multi-Port SRAM, 2KX9, 20ns, CMOS, PQCC52 | |
70121S20JG | IDT |
获取价格 |
HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT | |
70121S20JG8 | IDT |
获取价格 |
HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT | |
70121S20JGI | IDT |
获取价格 |
HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT | |
70121S20JGI8 | IDT |
获取价格 |
HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT | |
70121S25JG | IDT |
获取价格 |
Dual-Port SRAM, 2KX9, 25ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, GREEN, PL | |
70121S25JG8 | IDT |
获取价格 |
HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM | |
70121S25JGI | IDT |
获取价格 |
HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM |