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6N60-TC2 PDF预览

6N60-TC2

更新时间: 2024-10-29 14:53:19
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友顺 - UTC /
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9页 445K
描述
N-CH

6N60-TC2 数据手册

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6N60-TC2  
Power MOSFET  
ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
BVDSS  
IDSS  
VGS=0V, ID= 250μA  
600  
2.0  
V
VDS=600V, VGS=0V  
VGS=30V, VDS=0V  
VGS=-30V, VDS=0V  
10  
µA  
Forward  
Reverse  
100 nA  
-100 nA  
Gate-Source Leakage Current  
IGSS  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS=VGS, ID=250μA  
4.0  
1.8  
V
Static Drain-Source On-State Resistance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
VGS=10V, ID=3.0A  
CISS  
COSS  
CRSS  
675  
73  
pF  
pF  
pF  
VGS=0V, VDS=25V, f=1.0 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Total Gate Charge (Note 1)  
Gateource Charge  
3.9  
QG  
QGS  
QGD  
tD(ON)  
tR  
14  
4.8  
2.2  
10  
19  
37  
24  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
VDS=50V, VGS=10V, ID=6.0A  
IG=1mA (Note 1, 2)  
Gate-Drain Charge  
Turn-on Delay Time (Note 1)  
Rise Time  
VDS=100V, VGS=10V, ID=6.0A,  
RG=25(Note 1, 2)  
Turn-off Delay Time  
tD(OFF)  
tF  
Fall-Time  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Maximum Continuous Drain-Source Diode  
Forward Current  
IS  
6
A
A
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
12  
Drain-Source Diode Forward Voltage (Note 1)  
Reverse Recovery Time (Note 1)  
Reverse Recovery Charge  
VSD  
trr  
VGS=0V, IS=6.0A  
1.4  
V
VGS=0V, IS=6.0A,  
dIF/dt=100A/µs (Note1)  
308  
3
ns  
µC  
Qrr  
Notes: 1. Pulse Test : Pulse width 300µs, Duty cycle 2%.  
2. Essentially independent of operating temperature.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 9  
QW-R205-508.A  
www.unisonic.com.tw  

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