6N60-TC2
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS=0V, ID= 250μA
600
2.0
V
VDS=600V, VGS=0V
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
10
µA
Forward
Reverse
100 nA
-100 nA
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
4.0
1.8
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS=10V, ID=3.0A
ꢀ
CISS
COSS
CRSS
675
73
pF
pF
pF
VGS=0V, VDS=25V, f=1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
Gateource Charge
3.9
QG
QGS
QGD
tD(ON)
tR
14
4.8
2.2
10
19
37
24
nC
nC
nC
ns
ns
ns
ns
VDS=50V, VGS=10V, ID=6.0A
IG=1mA (Note 1, 2)
Gate-Drain Charge
Turn-on Delay Time (Note 1)
Rise Time
VDS=100V, VGS=10V, ID=6.0A,
RG=25ꢀ (Note 1, 2)
Turn-off Delay Time
tD(OFF)
tF
Fall-Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
6
A
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
12
Drain-Source Diode Forward Voltage (Note 1)
Reverse Recovery Time (Note 1)
Reverse Recovery Charge
VSD
trr
VGS=0V, IS=6.0A
1.4
V
VGS=0V, IS=6.0A,
dIF/dt=100A/µs (Note1)
308
3
ns
µC
Qrr
Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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